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参数资料
| 型号： | 2SK3663 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SSP, SC-70, 3 PIN |
| 文件页数： | 5/8页 |
| 文件大小： | 190K |
| 代理商： | 2SK3663 |
Data Sheet D16529EJ1V0DS
3
2SK3663
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
dT
-
P
e
rc
ent
age
o
fRa
ted
P
o
w
e
r-
%
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
TA - Ambient Temperature -
°C
P
T
-
Tot
a
l
P
o
w
e
rDi
s
ipat
ion
-
W
0
0.04
0.08
0.12
0.16
0.2
0.24
0
25
50
75
100
125
150
175
Mounted on FR-4 board of
2500 mm
2 x 1.1 mm
TA - Ambient Temperature -
°C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
ID
-
Drai
n
Current
-
A
0
0.4
0.8
1.2
1.6
2
0
0.4
0.8
1.2
1.6
Pulsed
2.5 V
VGS = 4.5 V
4.0 V
VDS - Drain to Source Voltage - V
ID
-
Drai
n
Current
-
A
0.0001
0.001
0.01
0.1
1
10
0
0.5
11.522.5
3
VDS = 10 V
Pulsed
TA = 125°C
75°C
25°C
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G
S
(o
ff)
-G
at
e
Cut
-of
fV
o
lta
ge
-V
0.4
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
VDS = 10 V
ID = 1.0 mA
Tch - Channel Temperature -
°C
|y
fs
|
-
Forw
ard
Trans
fe
rA
d
m
it
tanc
e
-
S
0.01
0.1
1
10
0.001
0.01
0.1
1
10
VDS = 10 V
Pulsed
TA =
25°C
25
°C
75
°C
125
°C
ID - Drain Current - A
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3663-A | 500 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK3664-A | 500 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK3664 | 500 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK3664-A | 500 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK3666 | 10 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3663-T1-A | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 20V 0.5A 3-Pin SC-70 T/R Tape & Reel 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,20V,0.5A,0.38ohm,SSP3 制造商:Renesas 功能描述:Trans MOSFET N-CH 20V 0.5A 3-Pin SC-70 T/R |
| 2SK3664-T1-A | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 20V 0.5A 3-Pin SC-75 T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,20V,0.5A,0.38ohm,USM3 制造商:Renesas 功能描述:Trans MOSFET N-CH 20V 0.5A 3-Pin SC-75 T/R |
| 2SK3666-2-TB-E | 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3666-3-TB-E | 功能描述:JFET SWITCHING DEVICE RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2SK3666-4-TB-E | 功能描述:JFET NCH J-FET RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
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