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参数资料
| 型号： | 2SK3663 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SSP, SC-70, 3 PIN |
| 文件页数： | 6/8页 |
| 文件大小： | 190K |
| 代理商： | 2SK3663 |
Data Sheet D16529EJ1V0DS
4
2SK3663
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS
(o
n)
-
D
ra
in
t
o
S
o
u
rc
e
O
n
-s
ta
te
R
e
s
is
tanc
e
-
0
0.2
0.4
0.6
0.8
1
1.2
-50
0
50
100
150
Pulsed
VGS = 2.5 V, ID = 0.15 A
VGS = 4.5 V, ID = 0.30 A
VGS = 4.0 V, ID = 0.30 A
Tch - Channel Temperature -
°C
R
DS
(o
n)
-
D
ra
in
t
o
S
o
u
rc
e
O
n
-s
ta
te
R
e
s
is
tanc
e
-
0
0.2
0.4
0.6
0.8
1
1.2
0
2468
10
12
Pulsed
ID = 0.30 A
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
R
DS
(o
n)
-
D
ra
in
t
o
S
o
u
rc
e
O
n
-s
ta
te
R
e
s
is
tanc
e
-
0
0.2
0.4
0.6
0.8
1
1.2
0.01
0.1
1
10
VGS = 4.5 V
Pulsed
25°C
75°C
TA = 125°C
ID - Drain Current - A
R
DS
(o
n)
-
D
ra
in
t
o
S
o
u
rc
e
O
n
-s
ta
te
R
e
s
is
tanc
e
-
0
0.2
0.4
0.6
0.8
1
1.2
0.01
0.1
1
10
VGS = 4.0 V
Pulsed
25°C
75°C
TA = 125°C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
R
DS
(o
n)
-
D
ra
in
t
o
S
o
u
rc
e
O
n
-s
ta
te
R
e
s
is
tanc
e
-
0
0.2
0.4
0.6
0.8
1
1.2
0.01
0.1
1
10
VGS = 2.5 V
Pulsed
25°C
75°
TA = 125°C
ID - Drain Current - A
C
is
s,
C
os
s,
C
rs
s
-C
a
p
a
c
itanc
e
-
pF
1
10
100
0.1
1
10
100
VGS = 0 V
f = 1.0 MHz
Ciss
Coss
Crss
VDS - Drain to Source Voltage - V
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3663-A | 500 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK3664-A | 500 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK3664 | 500 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK3664-A | 500 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK3666 | 10 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3663-T1-A | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 20V 0.5A 3-Pin SC-70 T/R Tape & Reel 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,20V,0.5A,0.38ohm,SSP3 制造商:Renesas 功能描述:Trans MOSFET N-CH 20V 0.5A 3-Pin SC-70 T/R |
| 2SK3664-T1-A | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 20V 0.5A 3-Pin SC-75 T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,20V,0.5A,0.38ohm,USM3 制造商:Renesas 功能描述:Trans MOSFET N-CH 20V 0.5A 3-Pin SC-75 T/R |
| 2SK3666-2-TB-E | 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3666-3-TB-E | 功能描述:JFET SWITCHING DEVICE RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2SK3666-4-TB-E | 功能描述:JFET NCH J-FET RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
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