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参数资料
| 型号： | 2SK3666-4 |
| 厂商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 10 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封装： | CP, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 41K |
| 代理商： | 2SK3666-4 |
2SK3666
No.8158-1/4
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN8158A
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
D2805GM IM MS TB-00001984 / 31505GB TS IM TA-100303
2SK3666
N-Channel Junction Silicon FET
Low-Frequency General-Purpose Amplifier,
Impedance Converter Applications
Applicatins
Low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications.
Features
Small IGSS.
Small Ciss
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSX
30
V
Gate-to-Drain Voltage
VGDS
--30
V
Gate Current
IG
10
mA
Drain Current
ID
10
mA
Allowable Power Dissipation
PD
200
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Gate-to-Drain Breakdown Voltage
V(BR)GDS
IG=--10A, VDS=0V
--30
V
Gate-to-Source Leakage Current
IGSS
VGS=--20V, VDS=0V
--1.0
nA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1A
--0.18
--0.95
--2.2
V
Drain Current
IDSS
VDS=10V, VGS=0V
0.6*
6.0*
mA
Forward Transfer Admittance
yfs
VDS=10V, VGS=0V, f=1kHz
3.0
6.5
mS
Input Capacitance
Ciss
VDS=10V, VGS=0V, f=1MHz
4
pF
Reverse Transfer Capacitance
Crss
VDS=10V, VGS=0V, f=1MHz
1.1
pF
Static Drain-to-Source On-State Resistance
RDS(on)
VDS=10mV, VGS=0V
200
* : The 2SK3666 is classified by IDSS as follows : (unit : mA).
Rank
2
3
4
IDSS
0.6 to 1.5
1.2 to 3.0
2.5 to 6.0
Marking : JK
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| 2SK3684-01L | 19 A, 500 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3666-4-TB-E | 功能描述:JFET NCH J-FET RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2SK3667 | 功能描述:MOSFET N-Ch 600V 7.5A Rdson 1 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3667(Q) | 功能描述:MOSFET N-Ch 600V 7.5A Rdson 1 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3667(Q,M) | 功能描述:MOSFET MOSFET N-Ch, 600V, 7.5A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3667(STA4,Q,M) | 制造商:Toshiba 功能描述:TRANSISTOR |
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