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参数资料
| 型号： | 2SK3669 |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-7J1B, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 188K |
| 代理商： | 2SK3669 |
2SK3669
2005-03-04
2
Electrical Characteristics (Ta
= 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±100
nA
Drain cutoff current
IDSS
VDS = 100 V, VGS = 0 V
100
A
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
100
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
3.0
5.0
V
Drain-source ON-resistance
RDS (ON)
VGS = 10 V, ID = 5 A
95
125
m
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 5 A
3
6
S
Input capacitance
Ciss
480
Reverse transfer capacitance
Crss
9
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
220
pF
Rise time
tr
2
Turn-on time
ton
12
Fall time
tf
2
Switching time
Turn-off time
toff
Duty ≤ 1%, tw = 10 s
12
ns
Total gate charge
(gate-source plus gate-drain)
Qg
8.0
Gate-source charge
Qgs
5.6
Gate-drain (“Miller”) charge
Qgd
VDD ≈ 80 V, VGS = 10 V,
ID = 10 A
2.4
nC
Source-Drain Diode Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
10
A
Pulse drain reverse current
(tw ≤ 10 ms) (Note 1)
IDRP
15
A
Pulse drain reverse current
(tw ≤ 1 ms) (Note 1)
IDRP
28
A
Forward voltage (diode)
VDS2F
IDR1 = 10 A, VGS = 0 V
1.7
V
Reverse recovery time
trr
65
ns
Reverse recovery charge
Qrr
IDR = 10 A, VGS = 0 V,
dIDR/dt = 50 A/s
90
nC
Marking
0 V
10 V
VGS
R
L
=5
VDD ≈ 50 V
ID = 10 A
VOUT
50
K3669
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3669(TE16L1,NQ) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 100V 10A PW-MOLD 制造商:Toshiba America Electronic Components 功能描述:Semi, Discrete, MOS, FET, TOSH, Pw-Mold, |
| 2SK366-BL(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans JFET N-CH 12mA Si 3-Pin |
| 2SK366-GR(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans JFET N-CH 6.5mA Si 3-Pin |
| 2SK3670(F) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 150V 0.67A 3-Pin TO-92 Mod Bulk |
| 2SK3670(F,M) | 功能描述:MOSFET N-CH 制造商:toshiba semiconductor and storage 系列:* 包装:散装 零件状态:停產 安装类型:通孔 供应商器件封装:TO-92MOD 封装/外壳:TO-226-3，TO-92-3 长体 标准包装:1 |
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