参数资料
型号: 2SK3669
元件分类: JFETs
英文描述: 10 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: LEAD FREE, 2-7J1B, 3 PIN
文件页数: 5/6页
文件大小: 188K
代理商: 2SK3669
2SK3669
2005-03-04
5
Pulse width tw (S)
rth – tw
N
or
m
aliz
ed
t
ra
ns
ie
nt
t
he
rm
al
im
pe
da
nc
e
r th
(t)
/R
th
(c
h-c
)
Drain-source voltage VDS (V)
Safe operating area
D
rain
cu
rre
nt
I D
(A)
0.1
0.01
10
100
3
1 m
10 m
100 m
1
10
0.003
Single pulse
0.2
0.1
0.05
0.02
0.01
Duty
= 0.5
T
PDM
t
Duty
= t/T
Rth (ch-c) = 6.25°C/W
1
A
val
anc
he
en
er
gy
E
AS
(
m
J)
Channel temperature (initial) Tch (°C)
EAS – Tch
RG = 25
VDD = 50 V, L = 3.44 mH
=
VDD
BVDSS
AS
2
I
L
2
1
Ε
Waveform
IAR
BVDSS
VDD
VDS
Test circuit
15 V
300
240
180
120
60
0
25
50
75
100
125
150
0.01
0.3
1
3
100
300
0.03
0.05
0.1
0.3
0.5
1
3
5
10
100
0.1
10
30
* Single nonrepetitive pulse
Tc
= 25°C
Curves must be derated
linearly with increase in
temperature.
VDSS max
100
s*
1 ms*
10 ms*
ID max (pulsed)*
ID max (continuous)
相关PDF资料
PDF描述
2SK3680-01 52 A, 500 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
2SK3681-01 43 A, 600 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
2SK3742 Si, POWER, FET
2SK3891-01R 17 A, 700 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK4005-01MR 6 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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