参数资料
型号: 2SK3685-01
厂商: FUJI ELECTRIC CO LTD
元件分类: JFETs
英文描述: 19 A, 500 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
封装: TO-247, 3 PIN
文件页数: 3/4页
文件大小: 106K
代理商: 2SK3685-01
3
2SK3685-01
FUJI POWER MOSFET
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250
A
VG
S(
th
)[
V
]
Tch [
°C]
0
10
20304050
60
0
2
4
6
8
10
12
14
Qg [nC]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=19A,Tch=25
°C
VGS
[V
]
400V
250V
Vcc= 100V
10
0
10
1
10
2
10
3
10
0
10
1
10
2
10
3
10
4
C
[p
F
]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
0.1
1
10
100
IF
[A
]
VSD [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80
s pulse test,Tch=25 °C
10
-1
10
0
10
1
10
2
10
0
10
1
10
2
10
3
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=10
td(on)
tr
tf
td(off)
t[n
s
]
ID [A]
0
255075
100
125
150
0
100
200
300
400
500
600
700
I
AS
=8A
I
AS
=12A
I
AS
=19A
EA
V
[m
J
]
starting Tch [
°C]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=50V,I(AV)<=19A
相关PDF资料
PDF描述
2SK3689-01 16 A, 600 V, 0.57 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
2SK369-BL 16 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
2SK369-GR 10 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
2SK3692-01 17 A, 450 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3700 5 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET
相关代理商/技术参数
参数描述
2SK3685-01SC 制造商:Fuji Electric 功能描述:
2SK3686-01 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 0.42Ohm;ID +/-16A;TO-220AB;PD 270W;VGS +/-3
2SK3686-01SC 制造商:Fuji Electric 功能描述:
2SK3687-01MRSC-P 制造商:Fuji Electric 功能描述:
2SK3688-01LSC 制造商:Fuji Electric 功能描述: