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参数资料
| 型号： | 2SK369-GR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 10 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 封装： | 2-5F1D, SC-43, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 754K |
| 代理商： | 2SK369-GR |
2SK369
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK369
For Low Noise Audio Amplifier Applications
Suitable for use as first stage for equalizer and MC head amplifiers.
High |Yfs|: |Yfs| = 40 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 5 mA)
High breakdown voltage: VGDS = 40 V (min)
Super low noise: NF = 1.0dB (typ.)
(VDS = 10 V, ID = 5 mA, f = 1 kHz, RG = 100 )
High input impedance: IGSS = 1 nA (max) (VGS = 30 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS
40
V
Gate current
IG
10
mA
Drain power dissipation
PD
400
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate cut-off current
IGSS
VGS = 30 V, VDS = 0
1.0
nA
Gate-drain breakdown voltage
V (BR) GDS
VDS = 0, IG = 100 μA
40
V
Drain current
IDSS
(Note 1)
VDS = 10 V, VGS = 0
5.0
30
mA
Gate-source cut-off voltage
VGS (OFF)
VDS = 10 V, ID = 0.1 μA
0.3
1.2
V
Forward transfer admittance
Yfs
VDS = 10 V, VGS = 0, f = 1 kHz,
(IDSS = 5 mA)
25
40
mS
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
75
pF
Reverse transfer capacitance
Crss
VGD = 10 V, ID = 0, f = 1 MHz
15
pF
NF (1)
VDS = 10 V, RG = 100 Ω, ID = 5 mA,
f
= 100 Hz
5
10
Noise figure
(Note 2)
NF (2)
VDS = 10 V, RG = 100 Ω, ID = 5 mA,
f
= 1 kHz
1
2
dB
Note 1: IDSS classification GR: 5.0~10.0 mA, BL: 8.0~16.0 mA, V: 14.0~30.0 mA
Note 2: Use this in the low voltage region (VDS
< 15 V) for low noise applications.
Unit: mm
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1D
Weight: 0.21 g (typ.)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK369-GR(F) | 制造商:Toshiba 功能描述:Trans JFET N-CH 10mA 3-Pin TO-92 Bulk |
| 2SK369GR(TPE2,F) | 制造商:Toshiba America Electronic Components 功能描述:LOW NOISE N-CHANNEL JFET - Tape and Reel |
| 2SK369GRF | 功能描述:JFET Low Noise N-Ch VGDS -40V NF 1.0dB RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2SK369-V(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans JFET N-CH 30mA Si 3-Pin TO-92 |
| 2SK3700(F) | 功能描述:MOSFET N-Ch 700V PWR FET ID 5A PD 150W 1150pF RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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