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参数资料
| 型号： | 2SK3700 |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-16C1B, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 228K |
| 代理商： | 2SK3700 |
2SK3700
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅣ)
2SK3700
Switching Regulator Applications
Low drain-source ON-resistance: RDS (ON) = 2.0 (typ.)
High forward transfer admittance: |Yfs| = 4.5 S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 720 V)
Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
900
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
900
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
5
Drain current
Pulse (Note 1)
IDP
15
A
Drain power dissipation (Tc=25°C)
PD
150
W
Single pulse avalanche energy
(Note 2)
EAS
351
mJ
Avalanche current
IAR
5
A
Repetitive avalanche energy (Note 3)
EAR
15
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
0.833
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
50
°C/W
Note 1: Ensure that the temperature does not exceed 150℃.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 25.7mH, RG = 25 Ω, IAR = 5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
―
JEITA
―
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3700(F) | 功能描述:MOSFET N-Ch 700V PWR FET ID 5A PD 150W 1150pF RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3702 | 功能描述:MOSFET N-CH 60V 18A TO-220ML RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK3703 | 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3703-1E | 功能描述:MOSFET NCH 4V DRIVE SERIES RoHS:否 制造商:NXP Semiconductors 晶体管极性:N-Channel 汲极/源极击穿电压:30 V 闸/源击穿电压: 漏极连续电流:180 mA 电阻汲极/源极 RDS（导通）:4.5 Ohms 配置: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-416 封装:Reel |
| 2SK3703-1EX | 制造商:ON Semiconductor 功能描述:NCH 4V DRIVE SERIES |
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