- 您现在的位置：买卖IC网 > PDF目录50004 > 2SK3700 5 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | 2SK3700 |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-16C1B, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 228K |
| 代理商： | 2SK3700 |
2SK3700
2009-09-29
2
Electrical Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
±10
μA
Gate-source breakdown voltage
V (BR) GSS
IG = ±10μA, VDS = 0V
±30
―
V
Drain cut-OFF current
IDSS
VDS = 720 V, VGS = 0 V
100
μA
Drain-source breakdown voltage
V (BR) DSS
IG = 10mA, VGS = 0 V
900
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 3 A
2.0
2.5
Ω
Forward transfer admittance
Yfs
VDS = 20 V, ID = 3 A
2.0
4.5
S
Input capacitance
Ciss
1150
Reverse transfer capacitance
Crss
20
Output capacitance
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
100
pF
Rise time
tr
30
Turn-ON time
ton
70
Fall time
tf
60
Switching time
Turn-OFF time
toff
170
ns
Total gate charge
(gate-source plus gate-drain)
Qg
28
Gate-source charge
Qgs
17
Gate-drain (“miller”) charge
Qgd
VDD≒400 V, VGS = 10 V, ID = 5 A
11
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
IDR
5
A
Pulse drain reverse current
(Note 1)
IDRP
15
A
Forward voltage (diode)
VDSF
IDR = 5 A, VGS = 0 V
1.7
V
Reverse recovery time
trr
900
ns
Reverse recovery charge
Qrr
IDR = 5 A, VGS = 0 V,
dIDR/dt = 100 A/μs
5.4
μ
C
Marking
Duty
≤ 1%, tw = 10 μs
0 V
10 V
VGS
RL = 133 Ω
VDD≒400 V
ID = 3 A
VOUT
50
Ω
K3700
TOSHIBA
Lot No.
Note 4
Part No. (or abbreviation code)
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3702 | 18 A, 60 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ653 | 37 A, 60 V, 0.037 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1420 | 25 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1904 | 10 A, 100 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ650 | 12 A, 60 V, 0.205 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3700(F) | 功能描述:MOSFET N-Ch 700V PWR FET ID 5A PD 150W 1150pF RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3702 | 功能描述:MOSFET N-CH 60V 18A TO-220ML RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK3703 | 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3703-1E | 功能描述:MOSFET NCH 4V DRIVE SERIES RoHS:否 制造商:NXP Semiconductors 晶体管极性:N-Channel 汲极/源极击穿电压:30 V 闸/源击穿电压: 漏极连续电流:180 mA 电阻汲极/源极 RDS（导通）:4.5 Ohms 配置: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-416 封装:Reel |
| 2SK3703-1EX | 制造商:ON Semiconductor 功能描述:NCH 4V DRIVE SERIES |
发布紧急采购，3分钟左右您将得到回复。