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参数资料
| 型号： | 2SK3688-01L |
| 厂商： | FUJI ELECTRIC CO LTD |
| 元件分类： | JFETs |
| 英文描述： | 16 A, 600 V, 0.57 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TO-220AB, TPACK-3 |
| 文件页数： | 3/4页 |
| 文件大小： | 234K |
| 代理商： | 2SK3688-01L |
3
2SK3688-01L,S,SJ
FUJI POWER MOSFET
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250μA
VGS(
th)
[V
]
Tch [°C]
0
1020
3040
5060
0
2
4
6
8
10
12
14
Qg [nC]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=16A,Tch=25 °C
VGS
[V]
480V
300V
Vcc= 120V
10
0
10
1
10
2
10
3
10
0
10
1
10
2
10
3
10
4
C
[p
F
]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50
0.1
1
10
100
IF
[A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 μs pulse test,Tch=25°C
10
-1
10
0
10
1
10
2
10
0
10
1
10
2
10
3
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=10 Ω
td(on)
tr
tf
td(off)
t[
n
s]
ID [A]
0
25
50
75
100
125
150
0
100
200
300
400
500
600
700
I
AS=7A
I
AS=10A
I
AS=16A
EAV
[m
J]
starting Tch [°C]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=60V,I(AV)<=16A
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3688-01S | 16 A, 600 V, 0.57 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK368 | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236 |
| 2SK3694-01L | 17 A, 450 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3699-01MR | 3.7 A, 900 V, 4.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3714 | 50 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3688-01LSC | 制造商:Fuji Electric 功能描述: |
| 2SK3689-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 0.42Ohm;ID +/-16A;TO-247;PD 235W;VGS +/-30V |
| 2SK3689-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK368-GR(TE85L,F) | 制造商:Toshiba 功能描述:Trans JFET N-CH 6.5mA 3-Pin TO-236 T/R |
| 2SK368-Y(TE85L,F) | 制造商:Toshiba 功能描述:Trans JFET N-CH 6.5mA 3-Pin TO-236 T/R |
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