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参数资料
| 型号： | 2SK3699-01MR |
| 厂商： | FUJI ELECTRIC CO LTD |
| 元件分类： | JFETs |
| 英文描述： | 3.7 A, 900 V, 4.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220F, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 104K |
| 代理商： | 2SK3699-01MR |
1
TO-220F
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
900
VDSX *5
900
Continuous drain current
ID
±3.7
Pulsed drain current
ID(puls]
±14.8
Gate-source voltage
VGS
±30
Repetitive or non-repetitive
IAR
*2
3.7
Maximum Avalanche Energy
EAS
*1
171.1
Maximum Drain-Source dV/dt
dVDS/dt *4
40
Peak Diode Recovery dV/dt
dV/dt
*3
5
Max. power dissipation
PD
Ta=25°C
2.16
Tc=25°C
43
Operating and storage
Tch
+150
temperature range
Tstg
Isolation Voltage
VISO
*6
2000
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3699-01MR
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Test Conditions
Zero gate voltage drain current
IDSS
VDS=900V VGS=0V
VDS=720V VGS=0V
VGS=±30V
ID=1.85A
VGS=10V
ID=1.85A
VDS=25V
VCC=600V ID=1.85A
VGS=10V
RGS=10
Min.
Typ.
Max.
Units
V
A
nA
S
pF
nC
A
V
s
C
ns
Min.
Typ.
Max.
Units
Thermal resistance
Rth(ch-c)
channel to case
Rth(ch-a)
channel to ambient
2.907
58.0
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250A
VGS=0V
ID= 250A
VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
VCC=450V
ID=3.7A
VGS=10V
L=22.9mH Tch=25°C
IF=3.7A VGS=0V Tch=25°C
IF=3.7A VGS=0V
-di/dt=100A/s
Tch=25°C
V
A
V
A
mJ
kV/s
W
°C
Vrms
900
3.0
5.0
25
250
100
3.31
4.30
24
430
650
60
90
3.5
5
19
29
711
32
48
17
26
16.5
24.8
6.4
9.6
3.7
5.6
3.7
0.9
1.50
1.0
4.0
-55 to +150
Outline Drawings [mm]
Equivalent circuit schematic
Super FAP-G Series
*3 IF -ID, -di/dt=50A/s, Vcc BVDSS, Tch 150°C
=
<
=
<
=
<
Gate(G)
Source(S)
Drain(D)
200305
*4 VDS 900V
*5 VGS=-30V
*6 f=60Hz, t=60sec.
<
=
*1 L=22.9mH, Vcc=90V, Tch=25°C See to Avalanche Energy Graph
*2 Tch 150°C
=
<
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相关代理商/技术参数 |
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| 2SK3699-01MRSC-P | 制造商:Fuji Electric 功能描述: |
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| 2SK369-GR(F) | 制造商:Toshiba 功能描述:Trans JFET N-CH 10mA 3-Pin TO-92 Bulk |
| 2SK369GR(TPE2,F) | 制造商:Toshiba America Electronic Components 功能描述:LOW NOISE N-CHANNEL JFET - Tape and Reel |
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