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参数资料
| 型号： | 2SK3714 |
| 元件分类： | JFETs |
| 英文描述： | 50 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | MP-45F, ISOLATED TO-220, 3 PIN |
| 文件页数： | 5/8页 |
| 文件大小： | 84K |
| 代理商： | 2SK3714 |
Data Sheet D16537EJ2V0DS
5
2SK3714
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
R
DS(
on)
-
Drain
to
Source
On-state
Resistance
-
m
0
50
10
20
30
40
0
50
100
150
ID = 40 A
10 V
VGS = 4.0 V
Pulsed
Tch - Channel Temperature - °C
C
is
s,
C
os
s,
C
rss
-
Capacitance
-
pF
10
0.1
100
1000
10000
1
10
100
VGS = 0 V
f = 1 MHz
Coss
Crss
Ciss
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
t
d(
on)
,t
r,
t
d(
off)
,t
f-
Switching
Time
-
ns
1
10
100
1000
0.1
1
10
100
VDD = 30 V
VGS = 10 V
RG = 0
td(off)
td(on)
tr
tf
ID - Drain Current - A
V
DS
-
Drain
to
Source
Voltage
-
V
0
5
10
15
20
25
30
35
40
45
50
0
1020
3040
5060
7080
0
1
2
3
4
5
6
7
8
9
10
ID = 50 A
Pulsed
VDS
VGS
VDD = 48 V
30 V
12 V
QG - Gate Charge - nC
V
GS
-
Gate
to
Source
Voltage
-
V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
I
F
-
Diode
Forward
Current
-
A
1.0
0
1.5
0.5
Pulsed
0.1
1
10
100
1000
VGS = 0 V
VGS = 10 V
VF(S-D) - Source to Drain Voltage - V
t
rr
-
Rev
e
rs
e
Rec
o
v
e
ry
Ti
me
-
ns
di/dt = 100 A/ s
VGS = 0 V
1
0.1
10
1
10
100
1000
100
IF - Diode Forward Current - A
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3714-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3714-S12-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3715(02)-S6-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3715-AZ | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 60V 75A 3-Pin(3+Tab) ITO-220 T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,60V,75A,4.8m ohm,iso TO-220 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 75A 3-Pin(3+Tab) ITO-220 T/R |
| 2SK3717(A) | 制造商:Renesas Electronics Corporation 功能描述: |
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