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参数资料
| 型号： | 2SK3719 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 10 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封装： | 3PXSOF, 3 PIN |
| 文件页数： | 5/7页 |
| 文件大小： | 242K |
| 代理商： | 2SK3719 |
Data Sheet D16787EJ2V0DS
3
2SK3719
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF POWER DISSIPATION
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
dT
-
D
erating
F
a
ctor
-
%
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
TA - Ambient Temperature -
°C
I
D
-
Dr
ain
Cur
rent
-
A
0
200
400
600
800
1000
0
2
468
10
0 V
0.2 V
0.1 V
VGS = 0.2 V
0.1 V
0.3 V
VDS - Drain to Source Voltage - V
GATE TO SOURCE CURRENT vs.
GATE TO SOURCE VOLTAGE
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
I
GS
-
Gate
to
So
u
rce
Current
-
A
0
10
20
30
40
10
20
30
40
0.2
0.4 0.6 0.8
0.2
0.4
0.6
0.8
VGS - Gate to Source Voltage - V
I
D
-
Dr
ain
Cur
rent
-
A
0
200
400
600
800
1000
1200
1400
1600
-0.8 -0.6 -0.4 -0.2
0
0.2 0.4 0.6 0.8
1
VDS = 2.0 V
VGS - Gate to Source Voltage - V
INPUT CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER ADMITTANCE AND GATE
CUT-OFF VOLTAGE vs. ZERO GATE VOLTAGE
DRAIN CURRENT
C
is
s-
Input
C
apacitance
-pF
1
10
110
100
VGS = 0 V
f = 1.0 MHz
VDS - Drain to Source Voltage - V
|y
fs
|-
Forward
T
ransfer
Admittan
ce
-
mS
V
G
S
(off)
-
Gate
C
ut
-off
Voltage
-
V
0.1
1
10
100
1000
| yfs |
VGS(off)
VDS = 2.0 V
IDSS - Zero Gate Voltage Drain Current -
A
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PDF描述 |
|---|---|
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK371-BL(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK371-V(F) | 制造商:Toshiba 功能描述:Trans JFET N-CH 3-Pin Mini |
| 2SK3720-5-TB-E | 功能描述:MOSFET N-CH 15V 30MA 3CP RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| 2SK3727-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK3728-01MRSC | 制造商:Fuji Electric 功能描述: |
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