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参数资料
| 型号： | 2SK3736 |
| 元件分类： | JFETs |
| 英文描述： | 6 A, 250 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | LEAD FREE, SC-46, 3 PIN |
| 文件页数： | 4/9页 |
| 文件大小： | 98K |
| 代理商： | 2SK3736 |
2SK3736
Rev.2.00 Jul 27, 2006 page 2 of 6
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
250
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±10
—
V
IG =
±100 A, VDS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±8 V, VDS = 0
Zero gate voltage drain current
IDSS
—
5
A
VDS = 250 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
0.5
—
1.5
V
VDS = 10 V, ID = 1 mA
RDS(on)
—
0.55
0.7
ID = 3 A, VGS = 4 V
Note3
Static drain to source on state
resistance
RDS(on)
—
0.57
0.8
ID = 3 A, VGS = 2.5V
Note3
Forward transfer admittance
|yfs|
5.5
9.2
—
S
ID = 3 A, VDS = 10 V
Note3
Output capacitance
Ciss
—
450
—
pF
Output capacitance
Coss
—
100
—
pF
Reverse transfer capacitance
Crss
—
60
—
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Total gate charge
Qg
—
17
—
nC
Gate to source charge
Qgs
—
0.8
—
nC
Gate to drain charge
Qgd
—
9.5
—
nC
VDD = 200 V, VGS = 4 V,
ID = 6 A
Turn-on delay time
td(on)
—
14
—
ns
Rise time
tr
—
48
—
ns
Turn-off delay time
td(off)
—
88
—
ns
Fall time
tf
—
25
—
ns
VGS = 4 V, ID= 3 A,
RL = 10
, Rg = 10
Body–drain diode forward voltage
VDF
—
0.94
1.45
V
IF = 6 A, VGS = 0
Note3
Body–drain diode reverse
recovery time
trr
—
125
—
ns
IF = 6 A, VGS = 0
diF/dt = 100 A/
s
Notes: 3. Pulse test
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3737-5-TL-E | 功能描述:MOSFET N-CH 15V 30MA 3MCP RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| 2SK3737-6-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH.HF 15V 0.03A SOT323 |
| 2SK3738-TL-E | 功能描述:JFET NCH J-FET RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
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| 2SK3742 | 功能描述:MOSFET N-Ch 900V 5A Rdson 2.5 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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