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参数资料
| 型号： | 2SK3736 |
| 元件分类： | JFETs |
| 英文描述： | 6 A, 250 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | LEAD FREE, SC-46, 3 PIN |
| 文件页数： | 5/9页 |
| 文件大小： | 98K |
| 代理商： | 2SK3736 |
2SK3736
Rev.2.00 Jul 27, 2006 page 3 of 6
Main Characteristics
Power vs. Temperature Derating
60
40
20
0
Channel
Dissipation
Pch
(W)
50
100
150
Case Temperature TC (°C)
Maximum Safe Operation Area
30
1
10
1000
Drain to Source Voltage VDS (V)
10
0.03
0.003
0.001
100
Drain
Current
I
D
(A)
0.1
3
100
3
0.1 0.3
30
300
1
0.3
0.01
Typical Output Characteristics
20
16
12
8
0
4
8
12
16
20
4
Drain
Current
I
D
(A)
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
10
5
01
2
3
4
5
Gate to Source Voltage VGS (V)
15
Drain
Current
I
D
(A)
5
4
3
2
1
02
4
6
8
10
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
0.1
0.2
10
5
0.5
0.2
0.5 1
2
100
Drain Current ID (A)
0.1
Static Drain to Source on State
Resistance vs. Drain Current
510 20
50
2
1.0
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
100
s
10
s
1 ms
PW = 10 ms
(1 shot)
Ta = 25
°C
DC
Operation
(T
C
= 25
°C)
Operation in this
area is limited
by R
DS (on)
Pulse Test
VGS = 0 V
2.4 V
1.8 V
2.2 V
2.0 V
2.8 V
5 V
2.6 V
10 V
VDS = 10 V
Pulse Test
–25
°C
TC = 75°C
25
°C
–25
°C
TC = 75°C
25
°C
3 A
Pulse Test
6 A
ID = 1.5 A
Pulse Test
4 V
VGS = 2.5 V
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PDF描述 |
|---|---|
| 2SK3740-ZK-AZ | 20 A, 250 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET |
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| 2SK3746 | 2 A, 1500 V, 13 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3749 | 100 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3737-5-TL-E | 功能描述:MOSFET N-CH 15V 30MA 3MCP RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| 2SK3737-6-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH.HF 15V 0.03A SOT323 |
| 2SK3738-TL-E | 功能描述:JFET NCH J-FET RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2SK3740-ZK-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Transistor,FET,Nch,250V/20A,TO263 |
| 2SK3742 | 功能描述:MOSFET N-Ch 900V 5A Rdson 2.5 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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