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参数资料
| 型号： | 2SK3740-ZK-AZ |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 250 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TO-263, MP-25ZK, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 169K |
| 代理商： | 2SK3740-ZK-AZ |
Data Sheet D16913EJ1V0DS
2
2SK3740
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 250 V, VGS = 0 V
10
A
Gate Leakage Current
IGSS
VGS =
±30 V, VDS = 0 V
±10
A
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1.0 mA
2.5
3.5
4.5
V
Forward Transfer Admittance
Note
| yfs |
VDS = 10 V, ID = 10 A
7.0
15
S
Drain to Source On-state Resistance
Note
RDS(on)
VGS = 10 V, ID = 10 A
0.12
0.16
Input Capacitance
Ciss
VDS = 10 V
1720
pF
Output Capacitance
Coss
VGS = 0 V
330
pF
Reverse Transfer Capacitance
Crss
f = 1.0 MHz
170
pF
Turn-on Delay Time
td(on)
VDD = 125 V, ID = 10 A
17
ns
Rise Time
tr
VGS = 10 V
17
ns
Turn-off Delay Time
td(off)
RG = 0
49
ns
Fall Time
tf
9
ns
Total Gate Charge
QG
VDD = 200 V
47
nC
Gate to Source Charge
QGS
VGS = 10 V
7
nC
Gate to Drain Charge
QGD
ID = 20 A
25
nC
Body Diode Forward Voltage
Note
VF(S-D)
IF = 20 A, VGS = 0 V
0.91
V
Reverse Recovery Time
trr
IF = 20 A, VGS = 0 V
210
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
s
1.4
C
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25
50
PG.
L
VDD
VGS = 20
→ 0 V
BVDSS
IAS
ID
VDS
Starting Tch
VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1%
VGS
Wave Form
ID
Wave Form
VGS
10%
90%
VGS
10%
0
ID
90%
td(on)
tr td(off)
tf
10%
τ
ID
0
ton
toff
PG.
50
D.U.T.
RL
VDD
IG = 2 mA
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3740-ZK-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Transistor,FET,Nch,250V/20A,TO263 |
| 2SK3742 | 功能描述:MOSFET N-Ch 900V 5A Rdson 2.5 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3742(Q) | 功能描述:MOSFET N-Ch 900V 5A Rdson 2.5 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3742(Q,M) | 功能描述:MOSFET N-Ch 900V 5A 45W PD Rdson 2.2 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3742(STA4,Q) | 制造商:Toshiba America Electronic Components 功能描述: |
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