- 您现在的位置：买卖IC网 > PDF目录33502 > 2SK3746 2 A, 1500 V, 13 ohm, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | 2SK3746 |
| 元件分类： | JFETs |
| 英文描述： | 2 A, 1500 V, 13 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TO-3PB, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 35K |
| 代理商： | 2SK3746 |
2SK3746
No.8283-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Input Capacitance
Ciss
VDS=30V, f=1MHz
380
pF
Output Capacitance
Coss
VDS=30V, f=1MHz
70
pF
Reverse Transfer Capacitance
Crss
VDS=30V, f=1MHz
40
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
12
ns
Rise Time
tr
See specified Test Circuit.
37
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
152
ns
Fall Time
tf
See specified Test Circuit.
59
ns
Total Gate Charge
Qg
VDS=200V, VGS=10V, ID=2A
37.5
nC
Gate-to-Source Charge
Qgs
VDS=200V, VGS=10V, ID=2A
2.7
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=200V, VGS=10V, ID=2A
20
nC
Diode Forward Voltage
VSD
IS=2A, VGS=0V
0.88
1.2
V
Note) Although the protection diode is contained between gate and source, be careful of handling enough.
Package Dimensions
unit : mm
7503-004
Switching Time Test Circuit
Avalanche Resistance Test Circuit
14.0
15.6
4.8
2.0
20.0
3.5
2.6
1.2
1.3
15.0
3.2
1.4
1.6
1.0
0.6
5.45
12 3
0.6
2.0
1 : Gate
2 : Drain
3 : Source
SANYO : TO-3PB
PW=10
s
D.C.
≤0.5%
P.G
RGS=50
G
S
D
ID=1A
RL=200
VDD=200V
VOUT
2SK3746
VIN
10V
0V
VIN
50
VDD
L
10V
0V
2SK3746
≥50
RG
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3749 | 100 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK3754 | 5 A, 30 V, 0.099 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3757 | 2 A, 450 V, 2.45 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3761 | 6 A, 600 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3774-01SJ | 32 A, 300 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3746 | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N TO-3PB |
| 2SK3746-1E | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3747 | 功能描述:MOSFET HIGH-VOLTAGE POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3747 | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N TO-3PML |
| 2SK3747-1E | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。