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参数资料
| 型号： | 2SK3761 |
| 元件分类： | JFETs |
| 英文描述： | 6 A, 600 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | SC-46, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 89K |
| 代理商： | 2SK3761 |
2SK3761
2004-02-26
1
10.5max
3.84}0.2
6.6
max.
2.7
15.6
max.
13.4
min.
1.5 max
0.81 max
2.54
3.9
max.
4.7max
1.3
0.45
2.7
1
2
3
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSY)
2SK3761
Switching Regulator Applications
Low drain-source ON resistance: RDS (ON) = 0.9 (typ.)
High forward transfer admittance: |Yfs| = 5.0S (typ.)
Low leakage current: IDSS = 100 A (VDS = 600 V)
Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA)
Maximum Ratings (Ta
= 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
600
V
Drain-gate voltage (RGS = 20 k)
VDGR
600
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
6
Drain current
Pulse (t
= 1 ms)
(Note 1)
IDP
24
A
Drain power dissipation (Tc
= 25°C)
PD
74
W
Single pulse avalanche energy
(Note 2)
EAS
54
mJ
Avalanche current
IAR
6
A
Repetitive avalanche energy (Note 3)
EAR
7.4
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
-55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
1.68
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
83.3
°C/W
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 2.6 mH, IAR = 6 A, RG = 25
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
unitF
1
3
2
Weight : 2.0g(typ.)
JEDEC
JEITA
TOSHIBA
TO-220AB
SC-46
\
1.
Gate
2.
Drain(HEAT SINK)
3.
Source
1.5 max
2.54
3.9
max
13.4
min
15.6
max
3.84}0.2
10.5 max
6.6
max
4.7 max
1.3
0.45
2.7
0.81
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3774-01SJ | 32 A, 300 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3774-01L | 32 A, 300 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3774-01S | 32 A, 300 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3784-01 | 2.4 A, 800 V, 6.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3794-Z | 20000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3761(M) | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 600V 6A 3PIN TO-220AB - Rail/Tube 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 600V 6A TO-220AB |
| 2SK3761(Q,M) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 600V 6A TO-220AB |
| 2SK3762 | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N 900V TO-220AB |
| 2SK3762(M) | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 900V 2.5A 3PIN TO-220AB - Rail/Tube |
| 2SK3762(Q,M) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 900V 2.5A TO-220AB |
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