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参数资料
| 型号： | 2SK3784-01 |
| 厂商： | FUJI ELECTRIC CO LTD |
| 元件分类： | JFETs |
| 英文描述： | 2.4 A, 800 V, 6.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220AB, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 111K |
| 代理商： | 2SK3784-01 |
1
Test Conditions
ID= 250A
VGS=0V
ID= 250A
VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
VCC=400V
ID=2.4A
VGS=10V
IF=2.4A VGS=0V Tch=25°C
IF=2.4A VGS=0V
-di/dt=100A/s
Tch=25°C
TO-220AB
VGS=-30V
Tch 150°C
*1
*2
VDS 800V
*3
Ta=25°C
Tc=25°C
Item
Symbol
Ratings
Unit
Remarks
Drain-source voltage
VDS
800
VDSX
800
Continuous drain current
ID
2.4
Pulsed drain current
ID(puls]
±9.6
Gate-source voltage
VGS
±30
Non-Repetitive
IAS
2.4
Maximum avalanche current
Non-Repetitive
EAS
314.7
Maximum avalanche energy
Repetitive
EAR
7.5
mJ
Maximum avalanche energy
Maximum Drain-Source dV/dt
dVDS/dt
40
Peak diode recovery dV/dt
dV/dt
5
Max. power dissipation
PD
2.02
75
Operating and storage
Tch
+150
temperature range
Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3784-01
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Test Conditions
Zero gate voltage drain current
IDSS
VDS=800V VGS=0V
VDS=640V VGS=0V
VGS=±30V
ID=1.2A
VGS=10V
ID=1.2A
VDS=25V
VCC=600V ID=1.2A
VGS=10V
RGS=10
Min.
Typ.
Max.
Units
V
A
nA
S
pF
nC
V
ns
C
ns
Min.
Typ.
Max.
Units
Thermal resistance
Rth(ch-c)
channel to case
Rth(ch-a)
channel to ambient
1.667
62.0
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
V
A
V
A
mJ
kV/s
W
°C
800
3.0
5.0
25
250
100
4.8
6.3
12
260
400
38
60
23
18
27
711
30
45
25
38
11.5
18.0
5.5
9.0
1.7
2.6
0.90
1.50
1
3.3
-55 to +150
Outline Drawings [mm]
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super FAP-G Series
200311
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=
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=
*1 Starting Tch=25°C,IAS=1A,L=577mH,Vcc=80V,RG=50
EAS limited by maximum channel temperature and avalanche current.
See to the ‘Avalanche Energy’ graph.
*2 Repetitive ratimg : Pulse width limited maximum channel temperature.
See to the ‘Transient Thermal impedance’ graph.
*3 IF -ID, -di/dt=50A/s, VCC BVDSS, Tch 150°C
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=
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=
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Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
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