- 您现在的位置：买卖IC网 > PDF目录33503 > 2SK3798 4 A, 900 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | 2SK3798 |
| 元件分类： | JFETs |
| 英文描述： | 4 A, 900 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-10U1B, SC-67, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 194K |
| 代理商： | 2SK3798 |
2SK3798
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)
2SK3798
Switching Regulator Applications
Low drain-source ON resistance: RDS (ON) = 2.5 (typ.)
High forward transfer admittance: |Yfs| = 2.8 S (typ.)
Low leakage current: IDSS = 100 μA (VDS = 720 V)
Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
900
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
900
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
4
Drain current
Pulse (t
= 1 ms)
(Note 1)
IDP
12
A
Drain power dissipation (Tc
= 25°C)
PD
40
W
Single pulse avalanche energy
(Note 2)
EAS
345
mJ
Avalanche current
IAR
4
A
Repetitive avalanche energy (Note 3)
EAR
4.0
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
-55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
3.125
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
62.5
°C/W
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: VDD = 90 V, Tch = 25°C, L = 39.6 mH, IAR = 4.0 A, RG = 25 Ω
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
1: Gate
2: Drain
3: Source
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
1
3
2
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3798 | 4 A, 900 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3799 | 8 A, 900 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK381-11-B | N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK381-11-C | N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK381-11-A | N-CHANNEL, Si, SMALL SIGNAL, JFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3798(Q) | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 900V 4A 3PIN SC-67 - Rail/Tube 制造商:Toshiba 功能描述:Nch 900V 4A 3.5@10V TO220SIS Bulk |
| 2SK3798(Q,M) | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH - Rail/Tube 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 900V 4A TO220SIS |
| 2SK3799 | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N 900V TO-220SIS 制造商:Toshiba America Electronic Components 功能描述:MOSFET, N, 900V, TO-220SIS 制造商:Toshiba America Electronic Components 功能描述:MOSFET, N, 900V, TO-220SIS; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:900V; On Resistance Rds(on):1.3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; No. of Pins:3 ;RoHS Compliant: Yes |
| 2SK3799(Q) | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 900V 8A 3PIN SC-67 - Rail/Tube 制造商:Toshiba 功能描述:Nch 900V 8A 1.3@10V TO220SIS Bulk 制造商:Toshiba America Electronic Components 功能描述:Transistor,MOSFET |
| 2SK3799(Q,M) | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH - Rail/Tube 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 900V 8A TO220SIS 制造商:Toshiba 功能描述:TRANSISTOR |
发布紧急采购，3分钟左右您将得到回复。