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参数资料
| 型号： | 2SK3798 |
| 元件分类： | JFETs |
| 英文描述： | 4 A, 900 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-10U1B, SC-67, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 194K |
| 代理商： | 2SK3798 |
2SK3798
2009-09-29
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±30 V, VDS = 0 V
±10
μA
Gate-source breakdown voltage
V (BR) GSS
IG =±10 μA, VDS = 0 V
±30
V
Drain cut-off current
IDSS
VDS = 720 V, VGS = 0 V
100
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
900
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 2 A
2.5
3.5
Ω
Forward transfer admittance
Yfs
VDS = 20 V, ID = 2 A
1.4
2.8
S
Input capacitance
Ciss
800
Reverse transfer capacitance
Crss
20
Output capacitance
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
85
pF
Rise time
tr
20
Turn-on time
ton
65
Fall time
tf
45
Switching time
Turn-off time
toff
165
ns
Total gate charge
Qg
26
Gate-source charge
Qgs
14
Gate-drain charge
Qgd
VDD 400 V, VGS = 10 V, ID = 4 A
12
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
IDR
4
A
Pulse drain reverse current
(Note 1)
IDRP
12
A
Forward voltage (diode)
VDSF
IDR = 4 A, VGS = 0 V
1.7
V
Reverse recovery time
trr
1100
ns
Reverse recovery charge
Qrr
IDR = 4 A, VGS = 0 V,
dIDR/dt = 100 A/μs
8.3
μC
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
Lot No.
Note 4
K3798
Part No. (or abbreviation code)
RL =
100
Ω
0 V
10 V
VGS
VDD 200 V
ID = 2 A
VOUT
50
Ω
Duty
≤ 1%, tw = 10 μs
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3798 | 4 A, 900 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3799 | 8 A, 900 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK381-11-B | N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK381-11-C | N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK381-11-A | N-CHANNEL, Si, SMALL SIGNAL, JFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3798(Q) | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 900V 4A 3PIN SC-67 - Rail/Tube 制造商:Toshiba 功能描述:Nch 900V 4A 3.5@10V TO220SIS Bulk |
| 2SK3798(Q,M) | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH - Rail/Tube 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 900V 4A TO220SIS |
| 2SK3799 | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N 900V TO-220SIS 制造商:Toshiba America Electronic Components 功能描述:MOSFET, N, 900V, TO-220SIS 制造商:Toshiba America Electronic Components 功能描述:MOSFET, N, 900V, TO-220SIS; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:900V; On Resistance Rds(on):1.3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; No. of Pins:3 ;RoHS Compliant: Yes |
| 2SK3799(Q) | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 900V 8A 3PIN SC-67 - Rail/Tube 制造商:Toshiba 功能描述:Nch 900V 8A 1.3@10V TO220SIS Bulk 制造商:Toshiba America Electronic Components 功能描述:Transistor,MOSFET |
| 2SK3799(Q,M) | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH - Rail/Tube 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 900V 8A TO220SIS 制造商:Toshiba 功能描述:TRANSISTOR |
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