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参数资料
| 型号： | 2SK3774-01L |
| 厂商： | FUJI ELECTRIC CO LTD |
| 元件分类： | JFETs |
| 英文描述： | 32 A, 300 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220AB, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 146K |
| 代理商： | 2SK3774-01L |
1
Item
Symbol
Ratings
Unit
Remarks
Drain-source voltage
VDS
300
VDSX
300
Continuous Drain Current
ID
32
Pulsed Drain Current
ID(puls]
±128
Gate-Source Voltage
VGS
±30
Maximum Avalanche current
IAR
32
Non-Repetitive
EAS
597.4
Maximum Avalanche Energy
Repetitive
EAR
27
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
dVDS/dt
20
Peak Diode Recovery dV/dt
dV/dt
5
Max. Power Dissipation
PD
270
2.02
Operating and Storage
Tch
+150
Temperature range
Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermal characteristics
2SK3774-01L,S,SJ
FUJI POWER MOSFET
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Test Conditions
Zero Gate Voltage Drain Current
IDSS
VDS=300V VGS=0V
VDS=240V VGS=0V
VGS=±30V
ID=16A
VGS=10V
ID=16A
VDS=25V
VCC=180V
ID=16A
VGS=10V
RGS=10
Min.
Typ.
Max.
Units
V
A
nA
S
pF
nC
V
ns
C
ns
Min.
Typ.
Max.
Units
Thermal resistance
Rth(ch-c)
channel to case
Rth(ch-a)
channel to ambient
0.463
75
°C/W
Symbol
BVDSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VSD
trr
Qrr
Item
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time ton
Turn-Off Time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250A
VGS=0V
ID= 250A
VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MH
VCC=150V
ID=32A
VGS=10V
IF=32A VGS=0V Tch=25°C
IF=32A VGS=0V
-di/dt=100A/s
Tch=25°C
V
A
V
A
mJ
kV/s
W
°C
300
3.0
5.0
25
250
10
100
0.10
0.13
12
24
1970
2955
335
502
20
30
29
44
7.5
11
57
86
7
10.5
44.5
67
18
27
13.5
20.5
0.90
1.50
270
3.0
-55 to +150
Outline Drawings (mm)
www.fujielectric.co.jp/fdt/scd
Super FAP-G Series
N-CHANNEL SILICON POWER MOSFET
Equivalent circuit schematic
200406
VGS=-30V
Note *1
Note *2
Note *3
VDS 300V
Note *4
Tc=25°C
Ta=25°C
=
<
Features
High speed switching
Low on-resistance
No secondary breakdown
Low driving power
Avalanche-proof
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Gate(G)
Source(S)
Drain(D)
Note *1:Tch
150°C,Repetitive and Non-repetitive
Note *2:StartingTch=25°C,IAS=13A,L=6.13mH,
VCC=48V,RG=50
EAS limited by maximum channel temperature
and Avalanche current.
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Thermal impedance’
graph.
Note *4:IF -ID, -di/dt = 50A/
s,VCC BVDSS,Tch 150°C
=
<
=
<
=
<
=
<
See to P4
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