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参数资料
| 型号： | 2SK3774-01L |
| 厂商： | FUJI ELECTRIC CO LTD |
| 元件分类： | JFETs |
| 英文描述： | 32 A, 300 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220AB, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 146K |
| 代理商： | 2SK3774-01L |
3
2SK3774-01L,S,SJ
FUJI POWER MOSFET
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250A
VG
S
(t
h
)[V
]
Tch [°C]
0
1020
304050
60
70
80
0
2
4
6
8
10
12
14
Qg [nC]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=32A,Tch=25 °C
VGS
[V]
240V
150V
Vcc= 60V
10
0
10
1
10
2
10
3
10
0
10
1
10
2
10
3
10
4
C
[
p
F
]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00
0.25
0.50
0.75
1.00
1.25
1.50
0.1
1
10
100
IF
[A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 s pulse test,Tch=25°C
10
-1
10
0
10
1
10
2
10
0
10
1
10
2
10
3
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=180V,VGS=10V,RG=10
td(on)
tr
tf
td(off)
t[
n
s
]
ID [A]
0
25
50
75
100
125
150
0
100
200
300
400
500
600
700
I
AS
=13A
I
AS
=20A
I
AS
=32A
EAV
[mJ
]
starting Tch [°C]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=48V,I(AV)<=32A
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3774-01S | 32 A, 300 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3784-01 | 2.4 A, 800 V, 6.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3794-Z | 20000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK3796-4 | 10 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK3796 | 10 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3777-01RSC | 制造商:Fuji Electric 功能描述: |
| 2SK3778-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 250V;RDS(ON) 43 Milliohms;ID 59A;TO-247;PD 410W;VGS +/-3 |
| 2SK3778-01SC | 制造商:Fuji Electric 功能描述: |
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