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| 型号： | 2SK3748 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 1500V 4A TO-3PML |
| 标准包装： | 100 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 1500V（1.5kV） |
| 电流 - 连续漏极(Id) @ 25° C： | 4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 7 欧姆 @ 2A，10V |
| 闸电荷(Qg) @ Vgs： | 80nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 790pF @ 30V |
| 功率 - 最大： | 3W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-3P-3 整包 |
| 供应商设备封装： | TO-3PML |
| 包装： | 托盘 |
Ordering number : EN8250B
2SK3748
N-Channel Power MOSFET
1500V, 4A, 7 Ω , TO-3PF-3L
Features
http://onsemi.com
?
?
?
?
Low ON-resistance, low input capacitance, ultrahigh-speed switching
High reliability (Adoption of HVP process)
Attachment workability is good by Mica-less package
Avalanche resistance guarantee
Speci ? cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
VDSS
VGSS
ID*
Conditions
Ratings
1500
±20
4
Unit
V
V
A
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
IDP
PD
Tch
Tstg
EAS
IAV
PW ≤ 10 μ s, duty cycle ≤ 1%
Tc=25 ° C
8
3.0
65
150
--55 to +150
165
4
A
W
W
° C
° C
mJ
A
* Shows chip capability
* 1 VDD=50V, L=20mH, IAV=4A (Fig.1)
* 2 L ≤ 20mH, single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7538A-002
Product & Package Information
? Package : TO-3PF-3L
? JEITA, JEDEC : SC-94
? Minimum Packing Quantity : 30 pcs./magazine
15.5
5.5
2SK3748-1E
3.6
3.0
Marking
Electrical Connection
2
2.0
2.0
4.0
0.75
0.9
2.0
K3748
LOT No.
1
1
2
3
1 : Gate
3
2 : Drain
3 : Source
5.45
5.45
TO-3PF-3L
Semiconductor Components Industries, LLC, 2013
July, 2013
53012 TKIM TC-00002764/72905 MSIM TB-00001688 / 31005QB TSIM TB-00001272 No.8250-1/7
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3748 | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N TO-3PML |
| 2SK3748-1E | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3748-1EX | 制造商:ON Semiconductor 功能描述:NCH 10V DRIVE SERIES |
| 2SK375 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK3753-01RSC | 制造商:Fuji Electric 功能描述: |
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