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参数资料
| 型号： | 2SK3770-01MR |
| 厂商： | FUJI ELECTRIC CO LTD |
| 元件分类： | JFETs |
| 英文描述： | 26 A, 120 V, 0.078 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220F, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 93K |
| 代理商： | 2SK3770-01MR |
1
TO-220F
Item
Symbol
Ratings
Unit
Remarks
Drain-source voltage
VDS
120
VDSX
90
Continuous Drain Current
ID
26
Pulsed Drain Current
ID(puls]
±104
Gate-Source Voltage
VGS
±30
Maximum Avalanche current
IAR
26
Non-Repetitive
EAS
342.2
Maximum Avalanche Energy
Repetitive
EAR
3.7
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
dVDS/dt
20
Peak Diode Recovery dV/dt
dV/dt
5
Max. Power Dissipation
PD
37
2.16
Operating and Storage
Tch
+150
Temperature range
Tstg
Isolation Voltage
VISO
2
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermal characteristics
2SK3770-01MR
FUJI POWER MOSFET
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Test Conditions
Zero Gate Voltage Drain Current
IDSS
VDS=120V VGS=0V
VDS=96V VGS=0V
VGS=±30V
ID=13A
VGS=10V
ID=13A
VDS=25V
VCC=48V
ID=13A
VGS=10V
RGS=10
Min.
Typ.
Max.
Units
V
A
nA
m
S
pF
nC
V
ns
C
ns
Min.
Typ.
Max.
Units
Thermal resistance
Rth(ch-c)
channel to case
Rth(ch-a)
channel to ambient
3.378
58
°C/W
Symbol
BVDSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VSD
trr
Qrr
Item
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time ton
Turn-Off Time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250A
VGS=0V
ID= 250A
VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=75V
VGS=0V
f=1MH
VCC=60V
ID=26A
VGS=10V
IF=26A VGS=0V Tch=25°C
IF=26A VGS=0V
-di/dt=100A/s
Tch=25°C
V
A
V
A
mJ
kV/s
W
°C
kVrms
120
3.0
5.0
25
250
100
63
78
612
760
1140
170
255
11
17
13
20
5
7.5
20
30
7.5
11
26
39
12
18
711
1.00
1.50
130
0.7
-55 to +150
Outline Drawings (mm)
www.fujielectric.co.jp/fdt/scd
Super FAP-G Series
N-CHANNEL SILICON POWER MOSFET
Equivalent circuit schematic
200407
VGS=-30V
Note *1
Note *2
Note *3
VDS 120V
Note *4
Tc=25°C
Ta=25°C
t=60sec. f=60Hz
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Features
High speed switching
Low on-resistance
No secondary breakdown
Low driving power
Avalanche-proof
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Gate(G)
Source(S)
Drain(D)
Note *1:Tch
150°C,Repetitive and Non-repetitive
Note *2:StartingTch=25°C,IAS=11A,L=3.77mH,
VCC=48V,RG=50
EAS limited by maximum channel temperature
and Avalanche current.
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Thermal impedance’
graph.
Note *4:IF -ID, -di/dt = 50A/
s,VCC BVDSS,Tch 150°C
=
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相关代理商/技术参数 |
参数描述 |
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| 2SK3770-01MRSC-P | 制造商:Fuji Electric 功能描述: |
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| 2SK3772-01 | 制造商:Fuji Electric 功能描述:MOSFET N TO-220AB |
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