参数资料
型号: 2SK3798
元件分类: JFETs
英文描述: 4 A, 900 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: LEAD FREE, 2-10U1B, SC-67, 3 PIN
文件页数: 4/6页
文件大小: 222K
代理商: 2SK3798
2SK3798
2005-01-26
4
DR
A
IN
P
O
WE
R
D
IS
S
IP
A
T
IO
N
P
D
(W
)
G
A
T
E
T
H
R
E
S
H
O
LD
VO
LT
AG
E
V
th
(
V
)
CASE TEMPERATURE Tc (°C)
RDS (ON) – Tc
D
R
A
IN-
S
O
UR
CE
O
N
RE
S
IS
TA
N
CE
R
DS
(
O
N)
(
)
DRAIN-SOURCE VOLTAGE VDS (V)
IDR – VDS
DR
A
IN
R
E
V
E
RS
E
CU
RRE
N
T
I
DR
(A)
DRAIN-SOURCE VOLTAGE VDS (V)
CAPACITANCE – VDS
C
A
P
A
CI
TA
NC
E
C
(p
F
)
CASE TEMPERATURE Tc (°C)
Vth – Tc
CASE TEMPERATURE Tc (°C)
PD – Tc
GA
T
E
-S
OU
R
C
E
V
O
LT
A
G
E
V
GS
(
V
)
TOTAL GATE CHARGE Qg (nC)
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
DR
A
IN
-S
O
URC
E
V
O
LT
A
G
E
V
DS
(V)
1
0.1
10
100
1000
10000
1
3
5
10
30 50
100
COMMON SOURCE
VGS = 0 V
f
= 1 MHz
Tc
= 25°C
Ciss
Coss
Crss
60
40
0
40
80
120
160
20
0
0.1
COMMON SOURCE
Tc
= 25°C
PULSE TEST
0.4
0.3
0.5
1
3
5
10
0.8
1.2
1.6
VGS = 0, 1 V
10
3
160
40
0
40
80
120
80
10
COMMON SOURCE
VGS = 10 V
PULSE TEST
8
6
4
2
0
ID = 4 A
2
1
0
10
20
COMMON SOURCE
ID = 4 A
Tc
= 25°C
PULSE TEST
VDD = 100 V
VDS
VGS
400
200
30
40
0
1
2
3
4
80
40
0
40
80
120
160
COMMON SOURCE
VDS = 10 V
ID = 1 mA
PULSE TEST
5
1
500
200
0
100
300
400
20
8
0
4
12
16
相关PDF资料
PDF描述
2SK3799 8 A, 900 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK381-11-B N-CHANNEL, Si, SMALL SIGNAL, JFET
2SK381-11-C N-CHANNEL, Si, SMALL SIGNAL, JFET
2SK381-11-A N-CHANNEL, Si, SMALL SIGNAL, JFET
2SK381-T11-C N-CHANNEL, Si, SMALL SIGNAL, JFET
相关代理商/技术参数
参数描述
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2SK3799(Q,M) 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH - Rail/Tube 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 900V 8A TO220SIS 制造商:Toshiba 功能描述:TRANSISTOR