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参数资料
| 型号： | 2SK3814 |
| 元件分类： | JFETs |
| 英文描述： | 60 A, 60 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 封装： | TO-251, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 115K |
| 代理商： | 2SK3814 |
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MOS FIELD EFFECT TRANSISTOR
2SK3814
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D16740EJ2V0DS00 (2nd edition)
Date Published August 2006 NS CP(K)
Printed in Japan
2004
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
DESCRIPTION
The 2SK3814 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Super low on-state resistance
RDS(on)1 = 8.7 m
Ω MAX. (VGS = 10 V, ID = 30 A)
RDS(on)2 = 10.5 m
Ω MAX. (VGS = 4.5 V, ID = 30 A)
Low Ciss: Ciss = 5450 pF TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±60
A
Drain Current (pulse)
Note1
ID(pulse)
±240
A
Total Power Dissipation (TC = 25°C)
PT1
84
W
Total Power Dissipation (TA = 25°C)
PT2
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Single Avalanche Energy
Note2
EAS
102
mJ
Repetitive Avalanche Current
Note3
IAR
32
A
Repetitive Avalanche Energy
Note3
EAR
102
mJ
Notes 1. PW
≤ 10
μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 30 V, RG = 25
Ω, VGS = 20 → 0 V, L = 100
μH
3. Tch(peak)
≤ 150°C, RG = 25 Ω
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3814
TO-251 (MP-3)
2SK3814-Z
TO-252 (MP-3Z)
(TO-251)
(TO-252)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3817 | 60 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3818 | 74 A, 60 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3823 | 40 A, 60 V, 0.041 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3823 | 40 A, 60 V, 0.041 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3825 | 74 A, 60 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3814-AZ | 功能描述:MOSFET N-CH 60V MP-3/TO-251 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK3814-Z-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 60V 60A 3-Pin(2+Tab) TO-252 Bulk |
| 2SK3814-Z-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3815-DL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:Cut Tape 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 60V 23A SOT404 |
| 2SK3816-DL-1E | 制造商:ON Semiconductor 功能描述:NCH 4V DRIVE SERIES - Tape and Reel 制造商:ON Semiconductor 功能描述:MOSFET NCH 4V DRIVE SERIES 制造商:ON Semiconductor 功能描述:REEL / NCH 4V DRIVE SERIES |
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