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参数资料
| 型号： | 2SK3814 |
| 元件分类： | JFETs |
| 英文描述： | 60 A, 60 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 封装： | TO-251, 3 PIN |
| 文件页数： | 5/8页 |
| 文件大小： | 115K |
| 代理商： | 2SK3814 |
Data Sheet D16740EJ2V0DS
5
2SK3814
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
R
DS(
on)
-Drain
to
S
ource
On
-state
Re
sistance
-
m
Ω
0
5
10
15
20
-75
-25
25
75
125
175
ID = 30 A
Pulsed
10 V
VGS = 4.5 V
Tch - Channel Temperature - °C
C
is
s,
C
os
s,
C
rss
-
Capacitance
-
pF
10
100
1000
10000
100000
0.01
0.1
1
10
100
VGS = 0 V
f = 1 MHz
Ciss
Coss
Crss
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
t
d(
on)
,t
r,
t
d(
off)
,t
f-
Swi
tching
Time
-
ns
1
10
100
1000
0.1
1
10
100
tr
td(off)
td(on)
tf
ID - Drain Current - A
V
DS
-
D
rain
to
So
urce
Voltage
-
V
0
10
20
30
40
50
60
0
204060
80
100
0
2
4
6
8
10
12
VDS
VDD = 48 V
30 V
12 V
ID = 60 A
VGS
QG - Gate Charge - nC
V
GS
-
Gate
to
So
urce
Voltage
-
V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
I
F-
Diode
Fo
rwa
rd
Curren
t-
A
0.01
0.1
1
10
100
1000
00.5
11.5
VGS = 10 V
0 V
Pulsed
VF(S-D) - Source to Drain Voltage - V
t
rr-
Rev
e
rs
e
Rec
o
v
e
ry
Ti
me
-
ns
1
10
100
1000
0.1
1
10
100
di/dt = 100 A/
μs
VGS = 0
IF - Diode Forward Current - A
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3817 | 60 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3818 | 74 A, 60 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3823 | 40 A, 60 V, 0.041 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3823 | 40 A, 60 V, 0.041 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3825 | 74 A, 60 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3814-AZ | 功能描述:MOSFET N-CH 60V MP-3/TO-251 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK3814-Z-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 60V 60A 3-Pin(2+Tab) TO-252 Bulk |
| 2SK3814-Z-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3815-DL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:Cut Tape 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 60V 23A SOT404 |
| 2SK3816-DL-1E | 制造商:ON Semiconductor 功能描述:NCH 4V DRIVE SERIES - Tape and Reel 制造商:ON Semiconductor 功能描述:MOSFET NCH 4V DRIVE SERIES 制造商:ON Semiconductor 功能描述:REEL / NCH 4V DRIVE SERIES |
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