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参数资料
| 型号： | 2SK3844 |
| 元件分类： | JFETs |
| 英文描述： | 45 A, 60 V, 0.0058 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-10R1B, SC-67, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 289K |
| 代理商： | 2SK3844 |
2SK3844
2006-08-17
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
mA
Drain cut-off current
IDSS
VDS = 60 V, VGS = 0 V
100
mA
V (BR) DSS
ID = 10 mA, VGS = 0 V
60
V
Drain-source breakdown voltage
V (BR) DSX
ID = 10 mA, VGS = -20 V
35
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 23 A
4.1
5.8
m
W
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 23 A
32
63
S
Input capacitance
Ciss
12400
Reverse transfer capacitance
Crss
700
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
1100
pF
Rise time
tr
18
Turn-on time
ton
45
Fall time
tf
35
Switching time
Turn-off time
toff
Duty <
= 1%, tw = 10 ms
200
ns
Total gate charge
(gate-source plus gate-drain)
Qg
196
Gate-source charge
Qgs
148
Gate-drain (“miller”) charge
Qgd
VDD ~- 48 V, VGS = 10 V,ID = 45 A
48
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR1
45
A
Pulse drain reverse current
(Note 1)
IDRP
180
A
Forward voltage (diode)
VDSF
IDR = 45 A, VGS = 0 V
-1.5
V
Reverse recovery time
trr
67
ns
Reverse recovery charge
Qrr
IDR = 45 A, VGS = 0 V,
dIDR/dt = 50 A/ms
70
nC
Marking
「
（
「
（
R
L
=
1.
3W
VDD ~- 30 V
0 V
VGS 10 V
4.
7
W
ID = 23 A
VOUT
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
K3844
Part No. (or abbreviation code)
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PDF描述 |
|---|---|
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3844(Q) | 功能描述:MOSFET MOSFET N-Ch 60V 45A Rdson=0.0058Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3845(Q) | 功能描述:MOSFET MOSFET N-Ch 60V 70A Rdson=0.0058Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3846(Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 40V 26A TO220NIS |
| 2SK3847(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK3847-SM(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
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