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参数资料
| 型号： | 2SK3856-6 |
| 厂商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封装： | CP, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 28K |
| 代理商： | 2SK3856-6 |
2SK3856
No.7905-1/4
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7905B
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
62005AD MS IM / 31005 TS IM / 81004 TS IM TA-101141
2SK3856
N-Channel Silicon MOSFET
FM Tuner, VHF-Band Amplifier
Applications
Features
Low noise.
High power gain.
Small reverse transfer capacitance.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDS
15
V
Gate-to-Source Voltage
VGS
±5V
Drain Current
ID
30
mA
Allowable Power Dissipation
PD
200
mW
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Voltage
VDSX
VGS=--4V, ID=100A15
V
Gate-to-Source Leakage Current
IGSS
VDS=0V, VGS=±5V
±10
nA
Zero-Gate Voltage Drain Current
IDSS
VDS=10V, VGS=0V
6.0*
12*
mA
Cutoff Voltage
VGS(off)
VDS=10V, ID=100A
--2.2
V
Forward Transfer Admittance
yfs
VDS=10V, VGS=0V, f=1kHz
11
16
mS
Input Capacitance
Ciss
VDS=10V, VGS=0V, f=1kHz
2.4
pF
Reverse Transfer Capacitance
Crss
VDS=10V, VGS=0V, f=1kHz
0.035
pF
Power Gain
PG
VDS=10V, VGS=0V, f=100MHz, See Specified Test Circuit.
35
dB
Noise Figure
NF
VDS=10V, VGS=0V, f=100MHz, See Specified Test Circuit.
2.0
dB
Marking : KD
* : The 2SK3856 is classified by IDSS as follows (unit : mA) :
Rank
5
6
IDSS
6 to 10
8 to 12
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3863(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK3863(TE16L1,Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 500V 5A DP |
| 2SK3868(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220SIS 制造商:Toshiba America Electronic Components 功能描述:PowerMOS,Nch,Vdss=500V,Id=5A,TO-220SIS |
| 2SK3868(Q,M) | 功能描述:MOSFET MOSFET N-Ch, 500V, 5A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3869 | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N 450V TO-220SIS |
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