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参数资料
| 型号： | 2SK3857MFV |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 0.37 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封装： | 2-1L1C, VESM, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 130K |
| 代理商： | 2SK3857MFV |
2SK3857MFV
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK3857MFV
For ECM
Application for Ultra-compact ECM
Absolute Maximum Ratings (Ta=25°C)
Characteristic
Symbol
Rating
Unit
Gate-Drain voltage
VGDO
-20
V
Gate Current
IG
10
mA
Drain power dissipation (Ta
= 25°C)
PD (Note 1)
150
mW
Junction Temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Note 1: Mounted on FR4 board
IDSS CLASSIFICATION
A-Rank
140~240A
B-Rank
210~350A
Marking
Equivalent Circuit
Unit: mm
JEDEC
-
JEITA
-
TOSHIBA
2-1L1C
Weight: 1.5mg (typ.)
VESM
1.Drain
2.Source
3.Gate
D
G
S
IDSS Classification Symbol
A :A-Rank
B :B-Rank
Type Name
9
1.
2±
0.
05
0.
32
±0
.0
5
1
2
3
0.
4
0.
4
0.
22
±
0.
05
0.8±0.05
0.
8±
0.
05
1.2±0.05
0.
5±
0.
05
0.
13
±
0.
05
0.5mm
0.45mm
0.4mm
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3857TV-A | 0.37 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK3862U | 0.47 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK3862S | 0.47 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK3866GS | SMALL SIGNAL, FET |
| 2SK3866G | 0.33 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3863(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK3863(TE16L1,Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 500V 5A DP |
| 2SK3868(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220SIS 制造商:Toshiba America Electronic Components 功能描述:PowerMOS,Nch,Vdss=500V,Id=5A,TO-220SIS |
| 2SK3868(Q,M) | 功能描述:MOSFET MOSFET N-Ch, 500V, 5A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3869 | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N 450V TO-220SIS |
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