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参数资料
| 型号： | 2SK3857MFV |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 0.37 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封装： | 2-1L1C, VESM, 3 PIN |
| 文件页数： | 3/5页 |
| 文件大小： | 130K |
| 代理商： | 2SK3857MFV |
2SK3857MFV
2007-11-01
3
IDSS=150μA
IDSS=330μA
Ta=85℃
Ta=25℃
Ta=-40℃
Gate - Source voltage VGS (V)
ID – VGS
Drain
Cur
rent
I
D
(
A
)
Drain Current IDSS (A)
|Yfs| – IDSS
Forwa
rd
tr
ansfer
admitt
ance
|
Y
fs
|
(
m
S)
0
3
1
2
400
500
Gate-S
ource
Cut
-of
fV
olt
age
V
GS(OFF)
(
V
)
Drain Current IDSS (A)
VGS(OFF) – IDSS
Gate - Source voltage VGS (V)
ID – VGS
Drain
Cur
rent
I
D
(
A
)
0
600
-1.0
-0.8
-0.6
-0.4
-0.2
300
100
200
0
400
500
VDS
=2V
Common Source
Ta
= 25 °C
0
600
-1.0
-0.8
-0.6
-0.4
-0.2
300
100
200
0
400
500
VDS
=2V
Common Source
100
200
300
600
|Yfs|:VDS
=2V
VGS
=0V
IDSS: VDS
=2V
VGS
=0V
Common Source
Ta
= 25 °C
400
500
0
-100
-200
-300
-400
100
200
300
600
400
500
VGS(OFF):VDS
=2V
ID
= 1μA
IDSS:VDS
=2V
VGS
=0V
Common Source
Ta
= 25 °C
-500
Drain - Source voltage VDS (V)
ID – VDS
Drain
Cur
rent
I
D
(
A
)
0
600
0
300
100
200
2.0
400
500
1.0
Common Source
Ta
= 25 °C
IDSS=170μA
VGS = 0 V
– 0.05 V
+ 0.1 V
+ 0.05 V
– 0.1 V
Drain - Source voltage VDS (V)
ID – VDS
Drain
Cur
rent
I
D
(
A
)
0
600
0
300
100
200
2.0
400
500
1.0
Common Source
Ta
= 25 °C
IDSS=330μA
VGS = 0 V
– 0.05 V
+ 0.1 V
+ 0.05 V
– 0.1 V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3863(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK3863(TE16L1,Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 500V 5A DP |
| 2SK3868(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220SIS 制造商:Toshiba America Electronic Components 功能描述:PowerMOS,Nch,Vdss=500V,Id=5A,TO-220SIS |
| 2SK3868(Q,M) | 功能描述:MOSFET MOSFET N-Ch, 500V, 5A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3869 | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N 450V TO-220SIS |
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