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参数资料
| 型号： | 2SK3846 |
| 元件分类： | JFETs |
| 英文描述： | 26 A, 40 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SC-67, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 225K |
| 代理商： | 2SK3846 |
2SK3846
2006-09-27
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (UMOSIII)
2SK3846
Switching Regulator, DC/DC Converter and Motor Drive
Applications
Low drainsource ON resistance
: RDS (ON) = 12 mΩ (typ.)
High forward transfer admittance
: |Yfs| = 33 S (typ.)
Low leakage current : IDSS = 100 μA (max) (VDS = 40 V)
Enhancement mode
: Vth = 1.5~2.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain–source voltage
VDSS
40
V
Drain–gate voltage (RGS = 20 kΩ)
VDGR
40
V
Gate–source voltage
VGSS
±20
V
DC
(Note 1)
ID
26
A
Drain current
Pulse (Note 1)
IDP
78
A
Drain power dissipation (Tc = 25°C)
PD
25
W
Single-pulse avalanche energy
(Note 2)
EAS
63
mJ
Avalanche current
IAR
26
A
Repetitive avalanche energy (Note 3)
EAR
2.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch–c)
5.0
°C/W
Thermal resistance, channel to
ambient
Rth (ch–a)
62.5
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 97 H, IAR = 26 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
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| 2SK3846(Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 40V 26A TO220NIS |
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