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参数资料
| 型号： | 2SK3850 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 700 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | TP, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 36K |
| 代理商： | 2SK3850 |
2SK3850
No.8193-1/4
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
31005PB TS IM TA-101202
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
2SK3850
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
Best suited for motor drive.
Low ON-resistance.
Low Qg.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
600
V
Gate-to-Source Voltage
VGSS
±30
V
Drain Current (DC)
ID
0.7
A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
2.8
A
Allowable Power Dissipation
PD
1.0
W
Tc=25
°C15
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
600
V
Zero-Gate Voltage Drain Current
IDSS
VDS=600V, VGS=0
100
A
Gate-to-Source Leakage Current
IGSS
VGS=±30V, VDS=0
±100
nA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
2.5
3.5
V
Forward Transfer Admittance
yfs
VDS=10V, ID=0.35A
280
560
mS
Static Drain-to-Source On-State Resistance
RDS(on)
VGS=10V, ID=0.35A
14
18.5
Input Capacitance
Ciss
VDS=20V, f=1MHz
96
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
29
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
16
pF
Marking :K3850
Continued on next page.
Ordering number : ENN8193
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3850-TL-E | 制造商:SANYO 功能描述:Nch 600V 0.7A 18.5 so?e` Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 600V 0.7A TO-251 |
| 2SK3856-5-TB-E | 制造商:SANYO 功能描述:MOSFET, N CH.HF, 15V, 0.03A, SOT23 Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH.HF 15V 0.03A SOT23 |
| 2SK3863(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK3863(TE16L1,Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 500V 5A DP |
| 2SK3868(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220SIS 制造商:Toshiba America Electronic Components 功能描述:PowerMOS,Nch,Vdss=500V,Id=5A,TO-220SIS |
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