- 您现在的位置：买卖IC网 > PDF目录50005 > 2SK3866 (PANASONIC CORP) 0.33 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, JFET PDF资料下载
参数资料
| 型号： | 2SK3866 |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 0.33 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封装： | ROHS COMPLIANT, TSSSMINI3-F1, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 410K |
| 代理商： | 2SK3866 |
Silicon Junction FETs (Small Signal)
Publication date: August 2008
SJF00095CED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SK3866
Silicon N-channel junction FET
For impedance conversion in low frequency
For electret capacitor microphone
Features
Low noise voltage NV
High voltage gain GV
Thin package: TSSSMini3-F1 (1.2 mm × 1.2 mm × 0.33 mm)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Drain-source voltage (Gate open)
VDSO
20
V
Drain-gate voltage (Souece open)
VDGO
20
V
Drain-source current (Gate open)
IDSO
2
mA
Drain-gate current (Souece open)
IDGO
2
mA
Power dissipation
PD
100
mW
Channel temperature
Tch
125
°
C
Storage temperature
Tstg
–55 to +125
°
C
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Drain current *1
ID
VDD = 2.0 V, Rd = 2.2 kW ± 1%
100
330
m
A
Drain-source current *2
IDSS
VDD = 2.0 V, Rd = 2.2 kW ± 1%, VGS = 0
107
310
m
A
Mutual conductance
gm
VDS = 2.0 V, VGS = 0, f = 1 kHz
660
1500
m
S
Noise voltage *3
NV
VDD = 2.0 V, Rd = 2.2 kW ± 1%
CO = 5 pF, A-curve
8
m
V
Voltage gain
GV1
VDD = 2.0 V, Rd = 2.2 kW ± 1%
CO = 5 pF, eG = 10 mV, f = 1 kHz
–5.0
–1.0
dB
GV2
VDD = 12 V, Rd = 2.2 kW ± 1%
CO = 5 pF, eG = 10 mV, f = 1 kHz
–3.0
3.0
GV3
VDD = 1.5 V, Rd = 2.2 kW ± 1%
CO = 5 pF, eG = 10 mV, f = 1 kHz
–7.0
–1.5
Voltage gain difference
D
GV . f *4
VDD = 2.0 V, Rd = 2.2 kW ± 1%
CO = 5 pF, eG = 10 mV
f = 1 kHz to 70 Hz
0.0
1.7
GV1 – GV3
0.5
1.0
dB
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. A protection diode is built-in between gate and source of transistor. However if forward current ows between gate and source transistor
might be damaged. So please be careful not insert reverse.
3. *1: ID is assured for IDSS .
*2: Rank classication
Rank
S
T
ID (mA)
100 to 220
180 to 330
IDSS (mA)
107 to 210
190 to 310
*3: NV is assured for design.
*4: D|GV . f | is assured for AQL 0.065. (The measurement method is used by source-grounded circuit.)
Package
Code
TSSSMini3-F1
Pin Name
1: Drain
2: Source
3: Gate
Marking Symbol: 4S
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK389-GR | 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK3934 | 15 A, 500 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3936 | 23 A, 500 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3938G | 100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK3946 | 10 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3868(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220SIS 制造商:Toshiba America Electronic Components 功能描述:PowerMOS,Nch,Vdss=500V,Id=5A,TO-220SIS |
| 2SK3868(Q,M) | 功能描述:MOSFET MOSFET N-Ch, 500V, 5A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3869 | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N 450V TO-220SIS |
| 2SK3869(Q) | 制造商:Toshiba 功能描述:Nch 450V 10A 0.68@10V TO220SIS Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 450V 10A TO220SIS |
| 2SK3875-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power, N-Ch, VDSS 900V, RDS(ON) 0.79Ohm, ID 13A, TO-247, PD 355W, VGS +/-30V |
发布紧急采购，3分钟左右您将得到回复。