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参数资料
| 型号： | 2SK3869 |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 450 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-10U1B, SC-67, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 225K |
| 代理商： | 2SK3869 |
2SK3869
2009-09-29
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
±10
μA
Gate-source breakdown voltage
V (BR) GSS
IG =±10 μA, VGS = 0 V
±30
V
Drain cutoff current
IDSS
VDS = 450 V, VGS = 0 V
100
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
450
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 5 A
0.55
0.68
Ω
Forward transfer admittance
Yfs
VDS = 10 V, ID = 5 A
2.5
5.5
S
Input capacitance
Ciss
1050
Reverse transfer capacitance
Crss
10
Output capacitance
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
110
pF
Rise time
tr
25
Turn-on time
ton
60
Fall time
tf
40
Switching time
Turn-off time
toff
130
ns
Total gate charge
Qg
28
Gate-source charge
Qgs
16
Gate-drain charge
Qgd
VDD 360 V, VGS = 10 V, ID = 10 A
12
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
10
A
Pulse drain reverse current
(Note 1)
IDRP
40
A
Forward voltage (diode)
VDSF
IDR = 10 A, VGS = 0 V
1.7
V
Reverse recovery time
trr
1000
ns
Reverse recovery charge
Qrr
IDR = 10 A, VGS = 0 V,
dIDR/dt = 100 A/μs
8.8
μC
Marking
RL =
40
Ω
0 V
10 V
VGS
VDD 200 V
ID = 5 A
VOUT
50
Ω
Duty
≤ 1%, tw = 10 μs
Lot No.
Note 4
K3869
Part No. (or abbreviation code)
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
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PDF描述 |
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| 2SK3919 | 64000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AB |
| 2SK3919-ZK | 64000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
| 2SK3920-01 | 67 A, 120 V, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3869(Q) | 制造商:Toshiba 功能描述:Nch 450V 10A 0.68@10V TO220SIS Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 450V 10A TO220SIS |
| 2SK3875-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power, N-Ch, VDSS 900V, RDS(ON) 0.79Ohm, ID 13A, TO-247, PD 355W, VGS +/-30V |
| 2SK3875-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK3876-01RSC | 制造商:Fuji Electric 功能描述: |
| 2SK3878(F) | 制造商:Toshiba 功能描述:Nch 900V 9A 1.3@10V TO3P(N) Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 900V 9A TO-3PN 制造商:Toshiba America Electronic Components 功能描述:MOSFET N CH 9A 900V TO3P 制造商:Toshiba America Electronic Components 功能描述:MOSFET, N CH, 9A, 900V, TO3P 制造商:Toshiba America Electronic Components 功能描述:MOSFET, N CH, 900V, 9A, SC-65; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:900V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:150W; No. of Pins:3 ;RoHS Compliant: Yes 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-Channel 900V 9A TO-3PN 制造商:Toshiba 功能描述:Trans MOSFET N-CH 900V 9A 3-Pin(3+Tab) TO-3PN |
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