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参数资料
| 型号： | 2SK3869 |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 450 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-10U1B, SC-67, 3 PIN |
| 文件页数： | 5/6页 |
| 文件大小： | 225K |
| 代理商： | 2SK3869 |
2SK3869
2009-09-29
5
0.01
0.1
1
10
100
1
10
100
1000
0
100
200
300
400
25
50
75
100
125
150
0.01
10μ
0.1
1
10
100μ
1ｍ
10ｍ
100ｍ
1
10
T
PDM
t
Duty
= t/T
Rth (ch-c) = 3.125°C/W
Duty=0.5
0.2
0.1
0.05
0.02
0.01
0.001
rth tw
SAFE OPERATING AREA
EAS Tch
PULSE WIDTH tw (S)
CHANNEL TEMPERATURE (INITIAL) Tch (°C)
NO
RMAL
IZED
TRANS
IE
N
T
H
E
R
MAL
IM
PE
DAN
C
E
r th
(
t)
/R
th
(ch-
c)
A
V
ALANCHE
E
N
E
R
GY
E
AS
(mJ)
DR
AIN
CURR
EN
T
I D
(A)
15 V
TEST CIRCUIT
WAVE FORM
IAR
BVDSS
VDD
VDS
RG = 25 Ω
VDD = 90 V, L = 3.7 mH
=
VDD
BVDSS
2
I
L
2
1
ΕAS
SINGLE PULSE
DRAIN
SOURCE VOLTAGE VDS (V)
*: SINGLE NONPETITIVE PULSE
Tc
= 25°C
Curves must be derated linearly
with increase in temperature.
ID max (CONTINUOUS)
100
μs *
DC OPERATION
Tc
= 25°C
1 ms *
VDSS max
ID max (PULSED) *
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3904 | 19 A, 450 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3919-AZ | 64000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AB |
| 2SK3919 | 64000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AB |
| 2SK3919-ZK | 64000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
| 2SK3920-01 | 67 A, 120 V, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3869(Q) | 制造商:Toshiba 功能描述:Nch 450V 10A 0.68@10V TO220SIS Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 450V 10A TO220SIS |
| 2SK3875-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power, N-Ch, VDSS 900V, RDS(ON) 0.79Ohm, ID 13A, TO-247, PD 355W, VGS +/-30V |
| 2SK3875-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK3876-01RSC | 制造商:Fuji Electric 功能描述: |
| 2SK3878(F) | 制造商:Toshiba 功能描述:Nch 900V 9A 1.3@10V TO3P(N) Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 900V 9A TO-3PN 制造商:Toshiba America Electronic Components 功能描述:MOSFET N CH 9A 900V TO3P 制造商:Toshiba America Electronic Components 功能描述:MOSFET, N CH, 9A, 900V, TO3P 制造商:Toshiba America Electronic Components 功能描述:MOSFET, N CH, 900V, 9A, SC-65; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:900V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:150W; No. of Pins:3 ;RoHS Compliant: Yes 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-Channel 900V 9A TO-3PN 制造商:Toshiba 功能描述:Trans MOSFET N-CH 900V 9A 3-Pin(3+Tab) TO-3PN |
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