- 您现在的位置：买卖IC网 > PDF目录30621 > 2SK3912 10000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-126 PDF资料下载
参数资料
| 型号： | 2SK3912 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 10000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-126 |
| 封装： | TO-126ML, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 34K |
| 代理商： | 2SK3912 |
2SK3912
No.8331-1/4
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN8331
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
62005PA MS IM TB-00001384
2SK3912
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
60
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
10
A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
40
A
Allowable Power Dissipation
PD
1W
Tc=25
°C10
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
60
V
Zero-Gate Voltage Drain Current
IDSS
VDS=60V, VGS=0V
1
A
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0V
±10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.2
2.6
V
Forward Transfer Admittance
yfs
VDS=10V, ID=5A
4.5
7.5
S
RDS(on)1
ID=5A, VGS=10V
50
65
m
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=5A, VGS=4V
65
92
m
Input Capacitance
Ciss
VDS=20V, f=1MHz
790
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
115
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
88
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
10
ns
Rise Time
tr
See specified Test Circuit.
35
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
72
ns
Fall Time
tf
See specified Test Circuit.
55
ns
Marking : K3912
Continued on next page.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3918-ZK | 48000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK3918 | 48000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 2SK3919-ZK | 64000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK3919 | 64000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 2SK3921-01L | 67 A, 120 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3934 | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N 500V TO-220SIS 制造商:Toshiba America Electronic Components 功能描述:MOSFET, N, 500V, TO-220SIS |
| 2SK3934(Q) | 制造商:Toshiba 功能描述:Nch 500V 15A 0.30@10V TO220SIS Bulk |
| 2SK3934(Q,M) | 功能描述:MOSFET MOSFET N-Ch, 500V, 15A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3934(STA4,X,M) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET |
| 2SK3935 | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N 450V TO-220SIS 制造商:Distributed By MCM 功能描述:450V 17A 50W Gds Toshiba Fet Sc-67 N-Ch |
发布紧急采购，3分钟左右您将得到回复。