- 您现在的位置：买卖IC网 > PDF目录30622 > 2SK3919 64000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA PDF资料下载
参数资料
| 型号： | 2SK3919 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 64000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 封装： | TO-251, MP-3, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 167K |
| 代理商： | 2SK3919 |
208
Transistor
2SB0835 (2SB835)
Silicon PNP epitaxial planer type
For low-frequency output amplification
■ Features
●
Low collector to emitter saturation voltage VCE(sat).
●
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
■ Absolute Maximum Ratings (Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
EIAJ:SC–71
3:Emitter
M Type Mold Package
6.9±0.1
0.55±0.1
0.45±0.05
1.0
±
0.1
1.0
2.5±0.1
1.0
1.5
1.5 R0.9
R0.9
R0.7
0.4
0.85
3.5
±
0.1
2.0
±
0.2
2.4
±
0.2
1.25
±
0.05
4.1
±
0.2
4.5
±
0.1
2.5
1
2
3
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
*
Tj
Tstg
Ratings
–20
–18
–5
–2
–1
1
150
–55 ~ +150
Unit
V
A
W
C
■ Electrical Characteristics (Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
ICEO
VCBO
VCEO
VEBO
hFE1
*
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Conditions
VCB = –10V, IE = 0
VCE = –18V, IB = 0
IC = –10A, IE = 0
IC = –1mA, IB = 0
IE = –10A, IC = 0
VCE = –2V, IC = –0.5A
VCE = –2V, IC = –1.5A
IC = –1A, IB = –50mA
IC = –500mA, IB = –50mA
VCB = –6V, IE = 50mA, f = 200MHz
VCB = –6V, IE = 0, f = 1MHz
min
–20
–18
–5
130
50
typ
200
40
max
–1
–10
280
– 0.5
–1.2
Unit
A
V
MHz
pF
*h
FE1 Rank classification
Rank
R
S
hFE1
130 ~ 210
180 ~ 280
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
Note.) The Part number in the Parenthesis shows conventional part number.
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3921-01L | 67 A, 120 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3921-01S | 67 A, 120 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3921-01SJ | 67 A, 120 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3940 | 70 A, 75 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3943-ZP | 82 A, 40 V, 0.0056 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3934 | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N 500V TO-220SIS 制造商:Toshiba America Electronic Components 功能描述:MOSFET, N, 500V, TO-220SIS |
| 2SK3934(Q) | 制造商:Toshiba 功能描述:Nch 500V 15A 0.30@10V TO220SIS Bulk |
| 2SK3934(Q,M) | 功能描述:MOSFET MOSFET N-Ch, 500V, 15A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3934(STA4,X,M) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET |
| 2SK3935 | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N 450V TO-220SIS 制造商:Distributed By MCM 功能描述:450V 17A 50W Gds Toshiba Fet Sc-67 N-Ch |
发布紧急采购，3分钟左右您将得到回复。