参数资料
型号: 2SK3919
元件分类: 小信号晶体管
英文描述: 64000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AB
封装: TO-251, MP-3, 3 PIN
文件页数: 3/8页
文件大小: 166K
代理商: 2SK3919
Data Sheet D17078EJ2V0DS
3
2SK3919
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT
-
Pe
rcentage
of
Rated
Powe
r-
%
0
20
40
60
80
100
120
0
25
50
75
100 125 150 175
TC - Case Temperature -
°C
P
T-
Total
Powe
r
Dissipation
-
W
0
5
10
15
20
25
30
35
40
0
25
50
75
100 125 150 175
TC - Case Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
I
D
-
Dr
ain
Cur
rent
-
A
0.1
1
10
100
1000
0.1
1
10
100
PW = 100
s
1 ms
10 ms
Power Dissipation Limited
RDS(on) Limited
(at VGS = 10 V)
ID(pulse)
ID(DC)
TC = 25°C
Single pulse
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(t)
-
Transient
T
hermal
Resistance
-
°C/W
0.01
0.1
1
10
100
1000
Rth(ch-A) = 125°C/W
Rth(ch-C) = 3.47°C/W
Single pulse
PW - Pulse Width - s
100
1 m
10 m
100 m
1
10
100
1000
相关PDF资料
PDF描述
2SK3919-ZK 64000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB
2SK3920-01 67 A, 120 V, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3927-01SJ 34 A, 250 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3927-01S 34 A, 250 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3930-01L 11 A, 600 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET
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