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参数资料
| 型号： | 2SK3919 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 64000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AB |
| 封装： | TO-251, MP-3, 3 PIN |
| 文件页数： | 4/8页 |
| 文件大小： | 166K |
| 代理商： | 2SK3919 |
Data Sheet D17078EJ2V0DS
4
2SK3919
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
-
Dr
ain
Cur
rent
-
A
0
50
100
150
200
250
300
00.5
11.5
22.5
VGS = 10 V
Pulsed
5.0 V
VDS - Drain to Source Voltage - V
I
D
-
Dr
ain
Cur
rent
-
A
0.01
0.1
1
10
100
1000
01
2
3456
VDS = 10 V
Pulsed
Tch =
55°C
25°C
75°C
125°C
150°C
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G
S
(off)
-
Gate
C
ut
-off
Voltage
-
V
0
1
2
3
4
-100
-50
0
50
100
150
200
VDS = 10 V
ID = 1 mA
Tch - Channel Temperature -
°C
|
y
fs
|-
Forward
T
ransfer
Admittan
ce
-
S
0.1
1
10
100
0.1
1
10
100
VDS = 10 V
Pulsed
Tch =
55°C
25°C
75°C
125°C
150°C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS(
on)
-Drain
to
S
ource
On
-state
Re
sistance
-m
0
5
10
15
1
10
100
1000
10 V
Pulsed
VGS = 5.0 V
ID - Drain Current - A
R
DS(
on)
-Drain
to
S
ource
On
-state
Re
sistance
-m
0
5
10
15
0
5
10
15
20
ID = 32 A
Pulsed
VGS - Gate to Source Voltage - V
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3919-ZK | 64000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
| 2SK3920-01 | 67 A, 120 V, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3927-01SJ | 34 A, 250 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3927-01S | 34 A, 250 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3930-01L | 11 A, 600 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3934 | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N 500V TO-220SIS 制造商:Toshiba America Electronic Components 功能描述:MOSFET, N, 500V, TO-220SIS |
| 2SK3934(Q) | 制造商:Toshiba 功能描述:Nch 500V 15A 0.30@10V TO220SIS Bulk |
| 2SK3934(Q,M) | 功能描述:MOSFET MOSFET N-Ch, 500V, 15A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3934(STA4,X,M) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET |
| 2SK3935 | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N 450V TO-220SIS 制造商:Distributed By MCM 功能描述:450V 17A 50W Gds Toshiba Fet Sc-67 N-Ch |
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