参数资料
型号: 2SK3921-01SJ
厂商: FUJI ELECTRIC CO LTD
元件分类: JFETs
英文描述: 67 A, 120 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: TPACK, D2PAK-3
文件页数: 2/4页
文件大小: 229K
代理商: 2SK3921-01SJ
2
Characteristics
2SK3921-01L,S,SJ
FUJI POWER MOSFET
0
25
50
75
100
125
150
0
40
80
120
160
200
240
280
Allowable Power Dissipation
PD=f(Tc)
PD
[W
]
Tc [°C]
012345
67
0
20
40
60
80
100
120
140
6.0V
7.0V
7.5V
20V
10V
8.0V
6.5V
VGS=5.5V
ID
[A]
VDS [V]
Typical Output Characteristics
ID=f(VDS):80 μs pulse test,Tch=25°C
01
23
4
5
6
7
8
9
10
0.1
1
10
100
ID
[A]
VGS[V]
Typical Transfer Characteristic
ID=f(VGS):80 μs pulse test,VDS=25V,Tch=25°C
0.1
1
10
100
0.1
1
10
100
gfs
[S]
ID [A]
Typical Transconductance
gfs=f(ID):80 μs pulse test,VDS=25V,Tch=25°C
0
2040
6080
100
120
0.00
0.04
0.08
0.12
0.16
0.20
7.5V
6.0V
RD
S(
on)
[
Ω
]
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 μs pulse test,Tch=25 °C
10V
20V
7.0V
6.5V
VGS=5.5V
-50
-25
0
25
50
75
100
125
150
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
RDS
(o
n)
[
Ω
]
Tch [°C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=33.5A,VGS=10V
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