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参数资料
| 型号： | 2SK3940 |
| 元件分类： | JFETs |
| 英文描述： | 70 A, 75 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-16C1B, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 188K |
| 代理商： | 2SK3940 |
2SK3940
2005-04-22
2
Electrical Characteristics (Ta
= 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
A
Drain cutoff current
IDSS
VDS = 75 V, VGS = 0 V
100
A
V (BR) DSS
ID = 10 mA, VGS = 0 V
75
V
Drain-source breakdown voltage
V (BR) DSX
ID = 10 mA, VGS = 20 V
45
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
3.0
5.0
V
Drain-source ON-resistance
RDS (ON)
VGS = 10 V, ID = 35 A
5.6
7.0
m
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 35 A
45
90
S
Input capacitance
Ciss
12500
Reverse transfer capacitance
Crss
510
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
970
pF
Rise time
tr
20
Turn-on time
ton
50
Fall time
tf
30
Switching time
Turn-off time
toff
Duty <= 1%, tw = 10 s
160
ns
Total gate charge
(gate-source plus gate-drain)
Qg
200
Gate-source charge
Qgs
60
Gate-drain (“Miller”) charge
Qgd
VDD 60 V, VGS = 10 V,
ID = 70 A
85
nC
Source-Drain Ratings and Characteristics (Ta
= 25°C)
Marking
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
70
A
Pulse drain reverse current
(Note 1)
IDRP
280
A
Forward voltage (diode)
VDSF
IDR = 70 A, VGS = 0 V
1.5
V
Reverse recovery time
trr
75
ns
Reverse recovery charge
Qrr
IDR = 70 A, VGS = 0 V,
dIDR/dt = 50 A/s
110
nC
R
L
=1.
0
VDD 35 V
0 V
VGS
10 V
4.
7
ID = 35 A
VOUT
K3940
TOSHIBA
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3943-ZP | 82 A, 40 V, 0.0056 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SK3979-TL | 6 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK3979TP-FA | 6000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK3979TP | 6000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK3979TP-FA | 6000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3940(Q) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 75V 70A 3-Pin(3+Tab) TO-3PN Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 75V 70A TO-3PN 制造商:Toshiba America Electronic Components 功能描述:MOSFER N-ch 75V 70A 150W TO-3P(N) |
| 2SK3943-ZP-E1-AY | 功能描述:MOSFET N-CH 40V MP-25ZP/TO-263 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK3944-TD-E | 制造商:SANYO 功能描述:Nch 60V 2A 340m@10V PCP(SC62) Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 60V 2A SOT89 |
| 2SK3947(Q) | 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 600V 6A 3-Pin(3+Tab) TO-220SIS |
| 2SK3977-TL-E | 制造商:SANYO 功能描述:Nch 100V 10A 92m@10V TP-FA Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 100V 10A TO251 制造商:Sanyo 功能描述:0 |
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