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参数资料
| 型号： | 2SK3979-TL |
| 厂商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 6 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | TP-FA, 3 PIN |
| 文件页数： | 4/4页 |
| 文件大小： | 40K |
| 代理商： | 2SK3979-TL |
2SK3979
No. A0263-4/4
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic
or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
Note on usage : Since the 2SK3979 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
PS
Amibient Tamperature, Ta --
°C
Allowable
Power
Dissipation,
P
D
-
W
Case Tamperature, Tc --
°C
Allowable
Power
Dissipation,
P
D
-
W
PD -- Ta
PD -- Tc
0
20
40
60
80
100
120
140
160
IT10513
0
0.2
0.4
0.6
0.8
1.2
1.0
0
20
40
60
80
100
120
140
160
IT10514
0
5
10
15
20
25
No
heat
sink
This catalog provides information as of January, 2006. Specifications and information herein are subject
to change without notice.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3979TP-FA | 6000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK3979TP | 6000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK3979TP-FA | 6000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK3986-01MR | 3.6 A, 500 V, 2.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3991-AZ | 30000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3979-TL-E | 制造商:SANYO 功能描述:Nch 200V 6A 450m@10V TP-FA Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 200V 6A TP-FA 制造商:Sanyo 功能描述:0 |
| 2SK3980-TD-E | 制造商:SANYO 功能描述:Nch 60V 0.9A obo Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 60V 0.9A SOT89 制造商:Sanyo 功能描述:0 |
| 2SK3984-ZK-E1-AY | 功能描述:MOSFET N-CH 100V 18A TO-252 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK3991-ZK-E1-AY | 功能描述:MOSFET N-CH 25V MP-3ZK/TO-252 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK3991-ZK-E2-AY | 功能描述:MOSFET N-CH 25V MP-3ZK/TO-252 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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