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参数资料
| 型号： | 2SK4005-01MR |
| 厂商： | FUJI ELECTRIC CO LTD |
| 元件分类： | JFETs |
| 英文描述： | 6 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220F, 3 PIN |
| 文件页数： | 12/18页 |
| 文件大小： | 380K |
| 代理商： | 2SK4005-01MR |
DW
G.
NO
.
H04-004-03
Fuji Electric Device Technology Co.,Ltd.
MS5F5984
3 / 18
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1.Scope
This specifies Fuji Power MOSFET 2SK4005-01MR
2.Construction
N-Channel enhancement mode power MOSFET
3.Applications
for Switching
4.Outview
TO-220F
Outview See to 8/18 page
5.Absolute Maximum Ratings at Tc=25
C (unless otherwise specified)
Description
Symbol
Characteristics
Unit
Remarks
V
DS
900
V
DSX
900
V
VGS=-30V
Continuous Drain Current
I
D
A
Pulsed Drain Current
I
DP
± 24.0
A
Gate-Source Voltage
V
GS
± 30
V
I
AR
6.0
A
E
AS
mJ
E
AR
mJ
Maximum Drain-Source dV/dt
dV
DS/dt
kV/
μs
Peak Diode Recovery dV/dt
dV/dt
kV/
μs
Tc=25°C
2.16
Ta=25°C
Operating and Storage
Tch
150
C
Temperature range
T
stg
-55 to +150
C
Isolation Voltage
V
ISO
kVrms
6.Electrical Characteristics at Tc=25
C (unless otherwise specified)
Static Ratings
Description
Symbol
Conditions
min.
typ.
max.
Unit
Drain-Source
I
D=
250μA
Breakdown Voltage BVDSS
V
GS=0V
900
-
V
Gate Threshold
I
D=
250μA
Voltage VGS(th)
V
DS=VGS
2.5
-
3.5
V
Zero Gate Voltage
V
DS=900V
V
GS=0V
T
ch=25°C
-
25
Drain Current IDSS
V
DS=720V
V
GS=0V
T
ch=125°C
-
250
Gate-Source
V
GS= ± 30V
Leakage Current IGSS
V
DS=0V
-
100
nA
Drain-Source
I
D=3A
On-State Resistance RDS(on)
V
GS=10V
-
1.92
2.50
Ω
μA
Note *1
Non-Repetitive
Maximum Avalanche Energy
Note *4
40
VDS
900V
2
t=60sec
f=60Hz
W
Maximum Power Dissipation
PD
70
Repetitive and Non-repetitive
Maximum Avalanche Current
487
Repetitive
Maximum Avalanche Energy
7.0
6.0
5
Drain-Source Voltage
Note *2
Note *3
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| 2SK401 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 10A I(D) | TO-3 |
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