参数资料
型号: 2SK4006-01S
厂商: FUJI ELECTRIC CO LTD
元件分类: JFETs
英文描述: 9 A, 900 V, 1.58 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: LEAD FREE, SMD, TPACK-3
文件页数: 16/21页
文件大小: 441K
代理商: 2SK4006-01S
DW
G.
NO
.
H04-004-03
MS5F6095
4 / 21
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Fuji Electric Device Technology Co.,Ltd.
Dynamic Ratings
Description
Symbol
Conditions
min.
typ.
max.
Unit
Forward
ID=4.5A
Transconductance gfs
V
DS=25V
5.0
10
-
S
Input Capacitance
Ciss
V
DS=25V
-
1100
1650
Output Capacitance
Coss
V
GS=0V
-
140
210
Reverse Transfer
f=1MHz
8.0
12
pF
Capacitance Crss
-
td(on)
V
cc=600V
-
25
38
Turn-On Time
tr
V
GS=10V
-
12
18
td(off)
ID=4.5A
-
50
75
ns
Turn-Off Time
tf
R
GS=10
-
12
18
Total Gate Charge
Q
G
V
cc=450V
-
31.0
46.5
Gate-Source Charge
Q
GS
I
D=9A
-
4.5
8.0
nC
Gate-Drain Charge
QGD
VGS=10V
-
11.0
16.5
Reverse Diode
Description
Symbol
Conditions
min.
typ.
max.
Unit
Diode Forward
I
F=9A
On-Voltage VSD
V
GS=0V
T
ch=25
C
-
0.90
1.50
V
Reverse Recovery
I
F=9A
Time trr
VGS=0V
-
3.2
-
s
Reverse Recovery
-di/dt=100A/s
Charge Qrr
T
ch=25
C
-
15.5
-
C
7.Thermal Resistance
Description
Symbol
min.
typ.
max.
Unit
Channel to Case
Rth(ch-c)
0.463
C/W
Channel to Ambient
Rth(ch-a)
75
C/W
Note *1 : Tch
150C, See Fig.1 and Fig.2
Note *2 : Starting Tch=25
C,IAS=3.6A,L=102mH,Vcc=90V,RG=50,See Fig.1 and Fig.2
E
AS limited by maximum channel temperature and avalanche current.
See to the 'Avalanche Energy' graph of page 20/21.
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
See to the 'Maximum Transient Thermal impedance' graph of page 21/21.
Note *4 : IF-ID,-di/dt=50A/s,VccBVDSS,Tch150
C
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