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参数资料
| 型号： | 2SK4018 |
| 元件分类： | JFETs |
| 英文描述： | 3 A, 100 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-7B1B, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 444K |
| 代理商： | 2SK4018 |
2SK4018
2004-12-24
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
—
±10
A
Drain cutoff current
IDSS
VDS = 100 V, VGS = 0 V
—
100
A
Drainsource breakdown
voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
100
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
—
2.0
V
VGS = 4 V, ID = 2 A
—
0.36
0.45
Drainsource ON-resistance
RDS (ON)
VGS = 10 V, ID = 2 A
—
0.28
0.35
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 2 A
1.5
3.5
—
S
Input capacitance
Ciss
—
280
—
Reverse transfer capacitance
Crss
—
50
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
—
105
—
pF
Rise time
tr
—
20
—
Turnon time
ton
—
50
—
Fall time
tf
—
40
—
Switching time
Turnoff time
toff
—
170
—
ns
Total gate charge (gatesource
plus gatedrain)
Qg
—
13.5
—
Gatesource charge
Qgs
—
8.5
—
Gatedrain (“Miller”) charge
Qgd
VDD ≈ 80 V, VGS = 10 V, ID = 3 A
—
5
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
3
A
Pulse drain reverse current
(Note 1)
IDRP
—
12
A
Forward voltage (diode)
VDSF
IDR = 3 A, VGS = 0 V
—
1.5
V
Reverse recovery time
trr
—
100
—
ns
Reverse recovery charge
Qrr
IDR = 3 A, VGS = 0 V, dIDR / dt = 50 A / s
—
0.2
—
C
Marking
K4018
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
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相关代理商/技术参数 |
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| 2SK4018(Q) | 制造商:Toshiba 功能描述:Nch 100V 3A 0.35@10V New PW-Mold2 Bulk 制造商:Toshiba 功能描述:Trans MOSFET N-CH 100V 3A 3-Pin(3+Tab) PW-Mold2 |
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