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参数资料
| 型号： | 2SK4083U |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 0.47 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封装： | ROHS COMPLIANT, TSSSMINI3-F1, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 405K |
| 代理商： | 2SK4083U |
Data Sheet PU10403EJ01V0DS
3
2SC5015
TYPICAL CHARACTERISTICS (TA = +25
°°°°C, unless otherwise specified)
250
200
150
100
50
0
25
50
75
100
125
150
Total
Power
Dissipation
P
tot
(mW)
Ambient Temperature TA (C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Collector
Current
I
C
(mA)
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
30
15
10
25
20
5
02
6
48
IB = 20 A
80 A
60 A
40 A
100 A
120 A
140 A
160 A
180 A
200 A
f = 1 MHz
Reverse
Transfer
Capacitance
C
re
(pF)
Collector to Base Voltage VCB (V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
2
1
0.5
0.2
0.1
15
10
220
VCE = 3 V
Collector
Current
I
C
(mA)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.01
0.001
0.1
0.0001
0.6
0.5
0.4
0.7
0.8
1.0
0.9
VCE = 1 V
Collector
Current
I
C
(mA)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.01
0.001
0.1
0.0001
0.6
0.5
0.4
0.7
0.8
1.0
0.9
VCE = 2 V
Collector
Current
I
C
(mA)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.01
0.001
0.1
0.0001
0.6
0.5
0.4
0.7
0.8
1.0
0.9
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK4084LS | 功能描述:MOSFET N-CH 500V 14A TO-220FI RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK4085LS | 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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| 2SK4085LS-1E | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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