- 您现在的位置：买卖IC网 > PDF目录33505 > 2SK4087LS 14 A, 600 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PDF资料下载
参数资料
| 型号： | 2SK4087LS |
| 元件分类： | JFETs |
| 英文描述： | 14 A, 600 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220FI(LS), 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 57K |
| 代理商： | 2SK4087LS |
2SK4087LS
No. A0555-2/5
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=10mA, VGS=0V
600
V
Zero-Gate Voltage Drain Current
IDSS
VDS=480V, VGS=0V
100
A
Gate-to-Source Leakage Current
IGSS
VGS=±30V, VDS=0V
±100
nA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
3
5
V
Forward Transfer Admittance
yfs
VDS=10V, ID=7A
4
8
S
Static Drain-to-Source On-State Resistance
RDS(on)
ID=7A, VGS=10V
0.47
0.61
Input Capacitance
Ciss
VDS=30V, f=1MHz
1200
pF
Output Capacitance
Coss
VDS=30V, f=1MHz
220
pF
Reverse Transfer Capacitance
Crss
VDS=30V, f=1MHz
50
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
27
ns
Rise Time
tr
See specified Test Circuit.
72
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
144
ns
Fall Time
tf
See specified Test Circuit.
48
ns
Total Gate Charge
Qg
VDS=200V, VGS=10V, ID=14A
46
nC
Gate-to-Source Charge
Qgs
VDS=200V, VGS=10V, ID=14A
8.6
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=200V, VGS=10V, ID=14A
26.4
nC
Diode Forward Voltage
VSD
IS=14A, VGS=0V
0.95
1.3
V
Package Dimensions
unit : mm (typ)
7509-002
Switching Time Test Circuit
Avalanche Resistance Test Circuit
16.0
14.0
3.6
3.5
7.2
16.1
0.7
2.55
2.4
1.2
0.9
0.75
0.6
1.2
4.5
2.8
12 3
10.0
3.2
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220FI(LS)
PW=10s
D.C.≤0.5%
P.G
RGS=50
G
S
D
ID=7A
RL=28.6
VDD=200V
VOUT
2SK4087LS
VIN
10V
0V
VIN
50
≥50
RG
VDD
L
10V
0V
2SK4087LS
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK4091-ZK-E1-AY | 30 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK4091-ZK-E1-AY | 30 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK4093TZ-E | 1000 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK4093TZ-E | 1000 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK4094 | 100 A, 60 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK4087LS_0710 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| 2SK4087LS_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| 2SK4087LS-1E | 功能描述:MOSFET NCH 10V DRIVE SERIES RoHS:否 制造商:NXP Semiconductors 晶体管极性:N-Channel 汲极/源极击穿电压:30 V 闸/源击穿电压: 漏极连续电流:180 mA 电阻汲极/源极 RDS（导通）:4.5 Ohms 配置: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-416 封装:Reel |
| 2SK4088LS | 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK4088LS-1E | 制造商:ON Semiconductor 功能描述:NCH 10V DRIVE SERIES - Ammo Pack |
发布紧急采购，3分钟左右您将得到回复。