参数资料
型号: 2SK4091-ZK-E1-AY
元件分类: 小信号晶体管
英文描述: 30 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA
封装: LEAD FREE, MP-3ZK, TO-252, 3 PIN
文件页数: 9/10页
文件大小: 285K
代理商: 2SK4091-ZK-E1-AY
Data Sheet D18635EJ1V0DS
6
2SK4091
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY
DERATING FACTOR
IAS
-S
ingle
A
valanch
eCurrent
-A
1
10
100
0.01
0.1
1
10
IAS = 18 A
EAS = 32.4 mJ
VDD = 15 V
RG = 25
Ω
VGS = 20 → 0 V
Starting Tch = 25
°C
L - Inductive Load - mH
Energy
Derating
Factor
-
%
0
20
40
60
80
100
120
25
50
75
100
125
150
VDD = 15 V
RG = 25
Ω
VGS = 20
→ 0 V
IAS
≤ 18 A
Starting Tch - Starting Channel Temperature -
°C
相关PDF资料
PDF描述
2SK4091(1)-S27-AY 30 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA
2SK4091-ZK-E2-AY 30 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA
2SK4092-A 21 A, 600 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK4092-A 21 A, 600 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK4095-T-AZ 0.5 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
相关代理商/技术参数
参数描述
2SK4091-ZK-E2-AY 功能描述:MOSFET 30V N-CH MP-3ZK/TO-252 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
2SK4092 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET
2SK4092-A 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET
2SK4093 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
2SK4093TZ-E 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 250V 1A 3-Pin TO-92 Mod Box 制造商:Renesas Electronics Corporation 功能描述:MOSFET - Tape and Reel 制造商:Renesas Electronics Corporation 功能描述:MOSFET N-CH 250V 1A TO-92